MUBW50-06A7 Allicdata Electronics
Allicdata Part #:

MUBW50-06A7-ND

Manufacturer Part#:

MUBW50-06A7

Price: $ 46.28
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E2
More Detail: IGBT Module NPT Three Phase Inverter with Brake 60...
DataSheet: MUBW50-06A7 datasheetMUBW50-06A7 Datasheet/PDF
Quantity: 1000
6 +: $ 42.07880
Stock 1000Can Ship Immediately
$ 46.28
Specifications
Current - Collector Cutoff (Max): 800µA
Base Part Number: MUBW
Supplier Device Package: E2
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Power - Max: 250W
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Active
Description

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MUBW50-06A7 is a module made of Insulated Gate Bipolar Transistors (IGBTs), and is part of the CoolMOS Power Transistor family produced by Infineon Technologies. This family of transistors is designed to provide high levels of power performance and efficiency through low switching losses. The IGBT modules are composed of two complementary polarities: the positive polarity (p-gate) and the negative polarity (n-gate). The MUBW50-06A7 module has a maximum collector current (IC) of 50A and a maximum collector voltage (VCES) of 600V.

The MUBW50-06A7 module is used in a variety of power applications, including motor control, UPS systems, and solar inverters. The module has a number of desirable features that make it an ideal choice for these types of power applications. The module has a very low input voltage range and a high switching frequency, which allows applications to run with greater efficiency and higher power performance levels. It also offers excellent thermal performance as well as overvoltage protection.

The main working principle of the MUBW50-06A7 module is based on the principle of Insulated Gate Bipolar Transistors (IGBTs). IGBTs are a type of power semiconductor device that is used to control large currents and voltages. The IGBT works by using the electric field generated between a gate electrode and the base of the transistor. When the gate electrode is activated, the electric field causes a reverse bias in the base-collector PN junction, creating an insulated gate that prevents the current from flowing between the collector and emitter terminals. This allows the current to be switched on and off at high speeds, providing an efficient power switching solution.

The MUBW50-06A7 module can be used in a variety of applications, including motor control, UPS systems, and solar inverters. When used in motor control applications, the module is able to control the speed and torque of motors with high accuracy. In UPS systems, the module can provide overload protection and help to improve system stability. Finally, in solar inverters, the module is able to efficiently convert DC power into AC power.

The MUBW50-06A7 module is designed for applications that require high power performance and efficiency. It is composed of two complementary polarities and is capable of providing low switching losses, high switching frequency, excellent thermal performance, and overvoltage protection. It is suitable for a wide range of applications, including motor control, UPS systems, and solar inverters.

The specific data is subject to PDF, and the above content is for reference

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