MUBW30-12E6K

MUBW30-12E6K Application Field and Working Principle

MUBW30-12E6K is a type of insulated gate bipolar transistor (IGBT) module. It is a three-phase, medium-voltage power module with a maximum terminal voltage of 1250V. It is specifically designed for maximum peak current rate of 30A for applications that require higher current rating than other similar modules.

IGBTs have become one of the most popular power devices due to their high performance, low power consumption, low losses, high reliability and fast switching speed. IGBT modules such as the MUBW30-12E6K are essential components in power converters, military, automotive and industrial applications.

Application Field

The MUBW30-12E6K can be used in a wide range of applications, including motor drives, wind turbine governors, electric vehicle drive systems, solar inverters, EV charging stations, UPSs, and high-power welding machines. It is also well-suited to static reactive power compensation and power factor correction applications.

This device can also be used in a variety of industrial applications such as steel production, elevator drives and automotive manufacturing. In addition to these, it can also be used in commutation and braking systems for rail, marine and aerospace applications.

Working Principle

The working principle of IGBTs is based on the phenomenon of voltage blocking. It is an effect of internal doping wherein an electric field is created, which prevents the flow of current through the channel layer. This electric field is generated when the gate voltage is applied, which causes electrons to move from the N-region to the P-region. As a result, the charge carriers are displaced and the distance between them is increased.

When the voltage is increased above the upper limits, the carrier density in the N-layer decreases, leaving a weakly charged layer that does not allow the current to flow easily. This prevents the conduction of electricity and thus, acts as a gate for the current. The current can only flow in the reverse direction when the gate voltage is decreased below the lower threshold.

The MUBW30-12E6K is also equipped with an integrated reverse blocking diode, which helps to protect the device from voltage reversal. This ensures that the device is not damaged by accidental current flow. The device also has an anti-parallel free wheel diode, which protects it from inductive loads.

The MUBW30-12E6K is a convenient, reliable and powerful device that is suitable for a wide range of applications. It offers the advantages of high efficiency, low noise and low power consumption, which makes it an ideal choice for the applications mentioned above.