MUBW50-12T8 Allicdata Electronics
Allicdata Part #:

MUBW50-12T8-ND

Manufacturer Part#:

MUBW50-12T8

Price: $ 76.22
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E3
More Detail: IGBT Module Trench Three Phase Inverter with Brake...
DataSheet: MUBW50-12T8 datasheetMUBW50-12T8 Datasheet/PDF
Quantity: 1000
5 +: $ 69.28990
Stock 1000Can Ship Immediately
$ 76.22
Specifications
Current - Collector Cutoff (Max): 2.7mA
Base Part Number: MUBW
Supplier Device Package: E3
Package / Case: E3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 3.5nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Power - Max: 270W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter with Brake
IGBT Type: Trench
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUBW50-12T8 is a high-performance, high-reliability, high-current insulated gate bipolar transistor (IGBT) module. It is one of the latest IGBT modules in the market. It is designed to handle high-power applications.

The MUBW50-12T8 consists of a number of high-power IGBTs in a common housing. The housing serves to protect and cool the IGBTs while they are in use. The MUBW50-12T8 is also equipped with a number of safety features to ensure that the module is safe to operate. The module is also equipped with interface terminals to allow easy connection to the electrical system.

The MUBW50-12T8 is designed for use in high-power applications such as motor control, welding and high-current switching applications. The module is designed to handle high peak power, current and voltage levels, and can be used in a range of industrial and commercial applications. The module is also equipped with a special IGBT driver circuit, which allows for better control of the IGBTs.

The working principle of the MUBW50-12T8 module is based upon the principles of insulated gate bipolar transistors (IGBT). These devices are basically a combination of a bipolar transistor and a MOSFET. When the gate of the IGBT is driven with the appropriate voltage, current begins to flow between the collector and emitter. At the same time, a voltage is generated across the drain source junction.

The IGBTs in the MUBW50-12T8 are designed to be driven with a pulsewidth modulation (PWM) signal. This allows for better control of the device, as well as more efficient operation. The high-current and high-voltage capability of the module make it ideal for motor control, welding and high-current switching applications. In addition, the module can be used in a variety of industrial and commercial applications.

The MUBW50-12T8 module is a high-performance, high-reliability, and high-current IGBT module that is suitable for use in a variety of applications. The module is equipped with a special IGBT driver circuit, which allows for better control of the IGBTs. In addition, the module is designed to handle high peak power, current and voltage levels, making it ideal for motor control, welding and high-current switching applications.

The specific data is subject to PDF, and the above content is for reference

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