MUBW50-17T8

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUBW50-17T8 is a high-power switching device, typically used for three-phase motor control, UPS systems and for a variety of other industrial applications. This device utilizes a Metal Oxide Field Effect Transistor (MOSFET) as its main switching element, in order to handle large gate currents and provide high switching performance. The MUBW50-17T8 also features an integral IGBT (Insulated Gate Bipolar Transistor), which is used to ensure low losses when switching large currents.

The MUBW50-17T8 is a 1200V, 50A device and is housed in an insulated plastic enclosure. The two MOSFETs that make up the device are individually turned on and off via an external control signal. The IGBT that is built into the device provides a signal for controlling the gate voltage of both MOSFETs, allowing for increased switching performance and higher efficiency.

The MUBW50-17T8 can be used in a variety of motor control applications, such as motor drives, variable speed drives, inverters, and UPS systems. The device is designed to be placed on a PCB, and can be mounted on either the top or bottom side of the board. The device provides high efficiency, low power loss and a long service life. The MUBW50-17T8 is designed to provide high switching speeds and low levels of current leakage, making it very suitable for use in a wide range of applications.

The working principle of the MUBW50-17T8 is based on the use of two MOSFETs, which are connected in series, with an IGBT as the control element. When the control signal is high, the IGBT provides a voltage to the gate of both MOSFETs, which forces them to turn on. When the control signal is low, the IGBT no longer provides a voltage and the MOSFETs are turned off. This allows for precise control of the device and high switching speeds.

In summary, the MUBW50-17T8 is a high-power switching device, typically used for three-phase motor control, UPS systems and for a variety of other industrial applications. It utilizes a Metal Oxide Field Effect Transistor (MOSFET) as its main switching element, and an integral IGBT (Insulated Gate Bipolar Transistor) for the gate control. The device provides high efficiency, low power losses, long service life and allows for high switching speeds and low current leakage.

The specific data is subject to PDF, and the above content is for reference