MUBW15-12A6 Allicdata Electronics
Allicdata Part #:

MUBW15-12A6-ND

Manufacturer Part#:

MUBW15-12A6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E1
More Detail: IGBT Module NPT Three Phase Inverter with Brake 12...
DataSheet: MUBW15-12A6 datasheetMUBW15-12A6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 500µA
Base Part Number: MUBW
Supplier Device Package: E1
Package / Case: E1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 850nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A
Power - Max: 70W
Current - Collector (Ic) (Max): 18A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUBW15-12A6 is a type of high power module (HPM) comprised of an Insulated Gate Bipolar Transistor (IGBT) and advanced features such as integrated protection and circuit breaker (fuse). It is designed to support high-voltage applications and is suitable for use in consumer, industrial, and automotive markets.

The MUBW15-12A6 offers class-leading performance and features with a reverse current of up to 150A, a continuous on-state current of up to 300A, and an off-state voltage of up to 1200V. It is a significant improvement over previous IGBT technologies, offering increased efficiency, improved power dissipation and reduced power losses, as well as improved reliability in demanding applications and shorter life cycle when subjected to overvoltages.

Its two-stage, half-bridge circuit configuration enables the MUBW15-12A6 to offer extremely low power dissipation. The device also contains integrated protection such as overvoltage, overcurrent, and temperature protection. This allows the MUBW15-12A6 to be used in a range of high-power applications such as motor control, power distribution, and power conversion.

The MUBW15-12A6\'s working principle is based on a Darlington configuration. This consists of two sections: anode and cathode. The anode is driven by a high voltage, which, when broken down into the two sections, creates a low-voltage on the one side and a high voltage on the other. This allows a high-voltage switching voltage on the anode and a low-voltage operation on the cathode, which creates a positive voltage on the one side and a negative voltage on the other.

The low-voltage operation on the cathode reduces power loss in the device, allowing it to be used in very high-power applications. Additionally, the device\'s two-stage configuration allows for higher efficiency, improved performance, and the ability to turn off very quickly. This makes the MUBW15-12A6 an ideal choice for motion control and power distribution applications.

The MUBW15-12A6 is an advanced IGBT module designed to support a wide range of power applications. It offers class-leading performance and features, including reverse current, continuous on-state current, and off-state voltage capabilities. Additionally, its integrated protection and two-stage, half-bridge circuit configuration make it ideal for high-power applications, such as motor and power distribution control, as well as power conversion.

The specific data is subject to PDF, and the above content is for reference

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