MUBW35-12A8 Allicdata Electronics
Allicdata Part #:

MUBW35-12A8-ND

Manufacturer Part#:

MUBW35-12A8

Price: $ 50.94
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E3
More Detail: IGBT Module NPT Three Phase Inverter with Brake 12...
DataSheet: MUBW35-12A8 datasheetMUBW35-12A8 Datasheet/PDF
Quantity: 1000
5 +: $ 46.31000
Stock 1000Can Ship Immediately
$ 50.94
Specifications
Current - Collector Cutoff (Max): 1.1mA
Base Part Number: MUBW
Supplier Device Package: E3
Package / Case: E3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 35A
Power - Max: 225W
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Active
Description

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MUBW35-12A8 is an insulated gate bipolar transistor (IGBT) module. It belongs to the family of transistors, specifically to IGBTs, or modules. This type of transistor is a semiconductor device constructed from various materials with properties of both a bipolar junction transistor and a field effect transistor. It is widely used for applications ranging from power conditioners, amplifiers, and power transmission.

The MUBW35-12A8 module contains two IGBTs in parallel, with each transistor having its own gate electrode and normally open switch. The two IGBTs are wired together with a common coaxial connection and the common gate terminal drives both IGBTs. This allows for higher currents to be switched, creating more efficient power transmission.

The working principle of the MUBW35-12A8 module is the same as any other IGBT module. When the gate voltage is below the ‘on’ threshold, the module is in its full ‘off’ state and there is no current flowing through it. When the gate voltage reaches the ‘on’ threshold, the module is ‘on’ and a current is allowed to pass through it. This current is proportional to the amount of voltage applied to the gate electrode.

In addition, the MUBW35-12A8 module has some other features that make it an attractive choice for applications. Its parallel IGBT configuration ensures low voltage drop and high current-carrying capacity, making it more efficient than conventional IGBT modules. It also has a high switching frequency, allowing for faster operation and more efficient power transmission. Additionally, the module is able to control large currents at low voltage levels, making it a good choice for portable applications.

The MUBW35-12A8 module is used in a variety of power application fields. It is commonly used in automotive systems such as fuel injection, power transmission, power conditioners, and amplifiers. In transportation applications, it is used to power drive trains, brakes, and door locks. In lighting applications, the module is used to power LEDs and lamps in a wide range of industrial, consumer, and automotive applications. Finally, the module is used in consumer and commercial equipment such as TVs, TVs, home entertainment systems, mobile phones, and various other consumer electronics.

In summary, MUBW35-12A8 is an IGBT module belonging to the family of transistors. It is an efficient and versatile module used in a wide variety of applications, from automotive to consumer electronics. It features a parallel IGBT configuration, allowing for low voltage drops and high current-carrying capacity. Additionally, its high switching frequency allows for faster operation and more efficient power transmission. This makes it the ideal choice for many power applications.

The specific data is subject to PDF, and the above content is for reference

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