MUBW15-12T7

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MUBW15-12T7 is an insulated-gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It is a three-phase IGBT module that consists of three separate internally isolated IGBTs. The device is designed for use in applications such as power conversion, motor control, and switching applications.

The MUBW15-12T7 has a peak collector current of 150A, a gate-emitter voltage (VCE(on)) of 12V, a collector-emitter voltage (VGE) of 15V, and a high maximum junction temperature of 175 °C. The body-drain diode has a forward voltage of 1.35V and a maximum reverse recovery time of 5.2 µs. The device offers a maximum frequency of 1 MHz and an Eoff rating of 4.5 mJ per cycle.

The main advantage of the MUBW15-12T7 is its wide headroom voltage. This ensures the module remains stable even under overload or short circuit conditions. This wide headroom also limits the output current at a maximum of 150A, reducing the risk of damages due to current and voltage overload.

The working principle of the MUBW15-12T7 involves a thyristor, which is a specialized type of solid-state switch, and a diode to control the current flow in the device. The thyristor is made up of two p-type semiconductor layers, separated from a n-type material by a thin oxide film. When the voltage on the gate terminal is increased, current begins to flow and the thyristor is triggered on. Then the current in the device is equal to the maximum current that can flow through the device. Under such conditions, the thyristor is said to be in a “saturated” state; this means that all of the energy applied is converted into heat and none is used to perform work.

The second element of the device is the rectifier or diode. A diode is a special type of semiconductor element which functions as a one-way valve that lets electricity flow through in one direction only. In the MUBW15-12T7 this diode serves to ensure that the work done on the device is not wasted. If a reverse voltage is applied to the diode, the diode prevents current from flowing, thus saving power.

The MUBW15-12T7 IGBT module can be used in a wide range of applications, including motor control, power conversion, switching applications, and more. The device is capable of operating at very high frequencies and provides a high headroom voltage, which reduces the risk of damage due to current and voltage overload. The device also features a Thyristor and diode combination, which provides a smooth and reliable current control.

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