MUBW35-12A7 Allicdata Electronics
Allicdata Part #:

MUBW35-12A7-ND

Manufacturer Part#:

MUBW35-12A7

Price: $ 46.66
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E2
More Detail: IGBT Module NPT Three Phase Inverter with Brake 12...
DataSheet: MUBW35-12A7 datasheetMUBW35-12A7 Datasheet/PDF
Quantity: 1000
6 +: $ 42.41160
Stock 1000Can Ship Immediately
$ 46.66
Specifications
Current - Collector Cutoff (Max): 1.1mA
Base Part Number: MUBW
Supplier Device Package: E2
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 35A
Power - Max: 225W
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Active
Description

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MUBW35-12A7 is a type of module used for transistor devices and is a top-notch technical product. It is often used for integrated gate-bounded transistor (IGBT) devices, which are considered to be more efficient than other transistors. It also has high quality, reliable performance and is durable. In terms of application, MUBW35-12A7 can be used in a variety of fields, such as motor control, power converters, power supplies, welding machines and so on. It can be applied to complex electrical systems with excellent results.

To understand how MUBW35-12A7 works, it is essential to understand the way IGBTs operate. IGBT is formed by a type of semiconductor materials called N-type and the P-type. It is considered a voltage-controlled device which means that it utilizes a voltage input to control the power output. It is designed to operate at higher frequencies than normal transistors and therefore is more suitable for controlling a wide range of electrical systems. The IGBT also has the ability to minimize switching losses, leading to higher efficiency.

The working principle of MUBW35-12A7 is based on the principles of IGBTs. It works by allowing a voltage input to be applied on its gate which then enables conductivity between the collector and the emitter. This connection is considered a closed circuit and electrical current can be conducted through it. The collector then holds the voltage charge that is sent to the emitter and this voltage can be controlled by the inputted gate voltage. As the voltage rises on the collector side, the higher charge forces the current to flow faster. This makes it possible to control the speed and intensity of the power being outputted.

MUBW35-12A7 is a module-type IGBT device, so the power output of these type of devices is higher and they are often preferred by electronically-inclined companies and professionals. This type of device offers high speed, high quality and durability, lower power supply cost and higher efficiency for a wide range of applications. And this makes it perfect for many types of electrical systems.

In conclusion, MUBW35-12A7 is considered to be a reliable module for transistors and IGBTs and is often used for many different types of applications ranging from motor control to welding machines. It is based on the principles of IGBTs and works by providing a voltage input to its gate which then allows for a closed circuit connection between the collector and the emitter. It offers high speed, high quality and durability, lower power supply cost and higher efficiency for many types of applications. All in all, MUBW35-12A7 is considered to be a suitable module for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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