MUBW50-06A8 Allicdata Electronics
Allicdata Part #:

MUBW50-06A8-ND

Manufacturer Part#:

MUBW50-06A8

Price: $ 55.98
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E3
More Detail: IGBT Module NPT Three Phase Inverter with Brake 60...
DataSheet: MUBW50-06A8 datasheetMUBW50-06A8 Datasheet/PDF
Quantity: 1000
5 +: $ 50.88380
Stock 1000Can Ship Immediately
$ 55.98
Specifications
Current - Collector Cutoff (Max): 800µA
Base Part Number: MUBW
Supplier Device Package: E3
Package / Case: E3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Power - Max: 250W
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Active
Description

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MUBW50-06A8 is an Insulated Gate Bipolar Transistor (IGBT) module with a collector emitter voltage rating of 600 volts and a nominal collector current rating of 50 amps. It is a part of a family of high performance, high-reliability IGBT modules. This family provides a wide range of on-state and switching characteristics to accommodate different application requirements. The MUBW50-06A8 has a wide frequency range, making it suitable for a variety of applications.

This IGBT module offers a range of features that make it ideal for applications in a variety of industries, such as industrial automation, electronic motor drive, renewable energy, and power electronics. It is a highly reliable device, with a high immunity to thermal shock and vibration. It also has high switching speed and low saturation voltage, making it suitable for high-frequency applications.

The working principle of the MUBW50-06A8 is based on the principle of connecting and disconnecting an electrical load using an insulated gate bipolar transistor, or IGBT. IGBTs are devices that combine the features of both MOSFETs and BJTs. The gate of the IGBT controls the flow of electrons between the collector and the emitter. When the gate is biased, electrons flow from the emitter to the collector and the device is in its on-state. When a negative voltage is applied to the gate, electrons flow from the collector to the emitter and the device is off.

The MUBW50-06A8 is a module containing two IGBTs in a single package. One IGBT controls the main current and the other IGBT controls the secondary current. The module has a dual TTL driver, which allows it to be used in a half-bridge configuration. The module has an output thermal limit and a built-in thermal shutdown circuit. It also has a built-in snubber circuit to minimize overvoltage transients caused by rapid switching.

The MUBW50-06A8 is designed specifically for high-frequency, low-loss applications. It has high efficiency, low switching losses, and fast switching times. It is capable of switching frequencies up to 100 kHz with high levels of accuracy and is suitable for applications such as motor drives and power converters. It is also highly reliable and has a long life span.

The MUBW50-06A8 is an ideal module for a wide range of applications in industrial automation, electronic motor drives, renewable energy, and power electronics. Its features, such as its high efficiency, low switching losses, and fast switching times make it ideal for high-frequency applications. Its reliability and long life span also make it a great choice for applications that require a reliable and robust IGBT module.

The specific data is subject to PDF, and the above content is for reference

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