MUBW35-12E7

Current - Collector Cutoff (Max):	400µA
Base Part Number:	MUBW
Supplier Device Package:	E2
Package / Case:	E2
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 125°C (TJ)
NTC Thermistor:	Yes
Input:	Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce:	2nF @ 25V
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 35A
Power - Max:	225W
Current - Collector (Ic) (Max):	52A
Voltage - Collector Emitter Breakdown (Max):	1200V
Configuration:	Three Phase Inverter with Brake
IGBT Type:	NPT
Part Status:	Obsolete

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MUBW35-12E7 is a kind of module belonging to the Transistors - IGBTs - Modules category. This module features a insulated-gate bipolar transistor (IGBT) with a full member module, making it suitable for many applications in harsh environments. It is a 1200V module with nominal current per phase of 35A and switching frequency of up to 10kHz.MUBW35-12E7 applications include sectors such as medical equipment, radio frequency (RF) power converters, solar power inverters, industrial welding equipment, uninterruptible power supplies, and many others. The use of this module could reduce the size of power circuits in comparison with other kind of power components.This module has outstanding operating temperature range -40°C up to +125°C; this together with its low conduction and switching losses, makes it suitable for cooling-sensitive and high-power conditions.The working principle of an IGBT is a combination of an insulated gate field effect transistor (IGFET) and a bipolar junction transistor (BJT). Through an applied voltage at the gate, it controls the current flow between emitter and collector. The control current at the gate travels between the collector and the emitter to control how and when the current flows between them. Furthermore, the voltage applied to the gate will determine the amount of current flowing through the transistor and changes the resistance between the emitter and collector as required.Therefore, MUBW35-12E7 is a great component for a wide range of applications due to its low resistance and offer great power density, excellent high-frequency performance, low switching and conduction losses, and ability to withstand high-temperature environments.

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