MUBW40-12T7 Allicdata Electronics
Allicdata Part #:

MUBW40-12T7-ND

Manufacturer Part#:

MUBW40-12T7

Price: $ 50.20
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E2
More Detail: IGBT Module Trench Three Phase Inverter with Brake...
DataSheet: MUBW40-12T7 datasheetMUBW40-12T7 Datasheet/PDF
Quantity: 1000
6 +: $ 45.63400
Stock 1000Can Ship Immediately
$ 50.2
Specifications
Current - Collector Cutoff (Max): 1.75mA
Base Part Number: MUBW
Supplier Device Package: E2
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Power - Max: 220W
Current - Collector (Ic) (Max): 62A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter with Brake
IGBT Type: Trench
Part Status: Active
Description

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The MUBW40-12T7 is a type of insulated-gate bipolar transistor (IGBT) module that is widely used in various applications. It is a three-phase device and is available in multiple ratings. The MUBW40-12T7 module has a voltage range of 600V, current ratings of 40A, and a 55% rated blocking current of 400A.

IGBTs are voltage-controlled semiconductor devices that combine the advantages of both a bipolar transistor and a MOSFET (metal oxide semiconductor field-effect transistor). The MUBW40-12T7 uses an IGBT structure that allows for fast switching speeds, reduced switching losses, and enhanced temperature stability. Additionally, it has a low power loss as well as high input impedance, making it suitable for various applications. The IGBT module is also characterized by its low on-state and forward voltage drop.

The MUBW40-12T7 can be used in a variety of applications such as motor control, AC drives, power conversion, and other industrial applications. Its wide range of operating temperatures (-40°C to +125°C) makes it suitable for a variety of high-temperature applications. Its superior thermal characteristics also make it suitable for use in high-efficiency and high-frequency applications.

The working principle of the MUBW40-12T7 is based on its construction. It is comprised of an emitter, collector, and gate electrodes. A base layer of insulating material is used to separate the emitter and collector. When the gate voltage is applied to the end of the IGBT module, it increases the conductivity of the junction between the gate and the emitter. This produces a forward current through the base and collector, allowing electrons to flow from the emitter to the collector, thus producing useful work.

The MUBW40-12T7 IGBT module is a versatile and reliable device that has many applications. It offers excellent temperature stability, lower power losses, and faster conduction speeds compared to standard power MOSFETs. With its superior switching characteristics and wide operating temperature range, the MUBW40-12T7 is suitable for a variety of high-temperature applications. The IGBT module also offers excellent electrical characteristics, making it perfect for a variety of linear and power applications.

The specific data is subject to PDF, and the above content is for reference

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