Allicdata Part #: | NSBC123EF3T5G-ND |
Manufacturer Part#: |
NSBC123EF3T5G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS DUAL NPN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | NSBC123EF3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06152 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 254mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1123 |
Supplier Device Package: | SOT-1123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A NSBC123EF3T5G transistor is a type of single, pre-biased bipolar (BJT) transistor. It is designed for use in a variety of applications, such as automotive, industrial and consumer electronics. The primary benefit of this type of transistor is that it has a higher operating voltage than other types of transistors, which allows it to handle higher power levels and maintain a stable performance. In addition, it is capable of providing a wide range of gains, making it a versatile device for a variety of applications.
The transistor consists of three electrodes: the base, the collector, and the emitter. The base is the control electrode, while the collector and the emitter act as the output terminals of the device. One important feature of the transistor is that it is pre-biased, meaning that the base voltage is set to a predetermined level before the device is used. This pre-bias allows for certain operating parameters, such as the current gain and operating voltage, to remain consistent even when different supply voltages and loads are applied.
When the base of the transistor is forward biased, current begins to flow from the base to the collector. This creates a current flow from the collector to the emitter. As more current flows between the collector and the emitter, the voltage drop across the transistor decreases, allowing for higher power levels and increased performance. When the base voltage is advanced further, current saturation is reached, meaning that the transistor can no longer control the current flow and the voltage drop increases, causing current to decrease.
NSBC123EF3T5G transistors are used in a variety of applications, including power and signal switching, voltage regulation, and amplifying small signals. They are also used in motor control and power supply circuits, where they are used to regulate the amount of current flowing through the motor or power supply. In addition, they are often used in audio and video processing applications, where they are used to amplify the signal. Overall, they offer many advantages over other types of transistors, making them a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NSBC124EF3T5G | ON Semicondu... | 0.07 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
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NSBC114YDXV6T1G | ON Semicondu... | -- | 4000 | TRANS 2NPN PREBIAS 0.5W S... |
NSBC143TPDXV6T1G | ON Semicondu... | -- | 8000 | TRANS PREBIAS NPN/PNP SOT... |
NSBC114EDP6T5G | ON Semicondu... | 0.06 $ | 8000 | TRANS 2NPN PREBIAS 0.408W... |
NSBC124EPDXV6T1G | ON Semicondu... | 0.06 $ | 1000 | TRANS PREBIAS NPN/PNP SOT... |
NSBC143ZPDXV6T1G | ON Semicondu... | 0.06 $ | 4000 | TRANS PREBIAS NPN/PNP SOT... |
NSBC114TDXV6T1G | ON Semicondu... | -- | 4000 | TRANS 2NPN PREBIAS 0.5W S... |
NSBC143ZDP6T5G | ON Semicondu... | 0.06 $ | 8000 | TRANS 2NPN PREBIAS 0.339W... |
NSBC124EDXV6T1G | ON Semicondu... | 0.07 $ | 4000 | TRANS 2NPN PREBIAS 0.5W S... |
NSBC124XDXV6T1G | ON Semicondu... | 0.07 $ | 4000 | TRANS PREBIAS DUAL NPN SO... |
NSBC143ZPDP6T5G | ON Semicondu... | 0.08 $ | 8000 | TRANS 2NPN PREBIAS 0.339W... |
NSBC114YPDP6T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS NPN/PNP PREBIAS SOT... |
NSBC114YDP6T5G | ON Semicondu... | -- | 1000 | TRANS 2NPN PREBIAS 0.339W... |
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NSBC114YPDXV6T1G | ON Semicondu... | 0.06 $ | 12000 | TRANS PREBIAS NPN/PNP SOT... |
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NSBC123JPDXV6T1G | ON Semicondu... | 0.07 $ | 20000 | TRANS PREBIAS NPN/PNP SOT... |
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NSBC123EF3T5G | ON Semicondu... | 0.07 $ | 1000 | TRANS PREBIAS DUAL NPNPre... |
NSBC124XF3T5G | ON Semicondu... | 0.07 $ | 1000 | TRANS PREBIAS DUAL NPNPre... |
NSBC143TF3T5G | ON Semicondu... | 0.07 $ | 1000 | TRANS PREBIAS DUAL NPNPre... |
NSBC144TF3T5G | ON Semicondu... | 0.07 $ | 1000 | TRANS PREBIAS NPN 0.254WP... |
NSBC144WF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC114TF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC115TF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC143EF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC123JF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC144EDXV6T1G | ON Semicondu... | -- | 1000 | TRANS 2NPN PREBIAS 0.5W S... |
NSBC115EDXV6T1G | ON Semicondu... | 0.07 $ | 4000 | TRANS 2NPN PREBIAS 0.5W S... |
NSBC123TPDP6T5G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC124EPDP6T5G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC143EPDP6T5G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
NSBC144WPDP6T5G | ON Semicondu... | 0.04 $ | 1000 | TRANS PREBIAS NPN 254MW S... |
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