NSBC123EF3T5G Allicdata Electronics
Allicdata Part #:

NSBC123EF3T5G-ND

Manufacturer Part#:

NSBC123EF3T5G

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS DUAL NPN
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: NSBC123EF3T5G datasheetNSBC123EF3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06152
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123
Description

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A NSBC123EF3T5G transistor is a type of single, pre-biased bipolar (BJT) transistor. It is designed for use in a variety of applications, such as automotive, industrial and consumer electronics. The primary benefit of this type of transistor is that it has a higher operating voltage than other types of transistors, which allows it to handle higher power levels and maintain a stable performance. In addition, it is capable of providing a wide range of gains, making it a versatile device for a variety of applications.

The transistor consists of three electrodes: the base, the collector, and the emitter. The base is the control electrode, while the collector and the emitter act as the output terminals of the device. One important feature of the transistor is that it is pre-biased, meaning that the base voltage is set to a predetermined level before the device is used. This pre-bias allows for certain operating parameters, such as the current gain and operating voltage, to remain consistent even when different supply voltages and loads are applied.

When the base of the transistor is forward biased, current begins to flow from the base to the collector. This creates a current flow from the collector to the emitter. As more current flows between the collector and the emitter, the voltage drop across the transistor decreases, allowing for higher power levels and increased performance. When the base voltage is advanced further, current saturation is reached, meaning that the transistor can no longer control the current flow and the voltage drop increases, causing current to decrease.

NSBC123EF3T5G transistors are used in a variety of applications, including power and signal switching, voltage regulation, and amplifying small signals. They are also used in motor control and power supply circuits, where they are used to regulate the amount of current flowing through the motor or power supply. In addition, they are often used in audio and video processing applications, where they are used to amplify the signal. Overall, they offer many advantages over other types of transistors, making them a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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