NSBC114YPDXV6T5G

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	NSBC1*
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	500mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

NSBC114YPDXV6T5G is a pre-biased transistor array designed in an SOIC-8 package to provide very low-voltage and low-current DC characteristics. The array consists of two transistors, one PMOS and one NMOS, connected in a complementary pair configuration with a simple gatewide decoupling capacitor. This device is manufactured in a 0.8 micron process technology and can provide good noise and dynamic performance for various applications.

Application Field

NSBC114YPDXV6T5G pre-biased transistor array can be used in various applications such as power management, level shifting, voltage regulation and switching, where transistor switching is required. It can also be used to control multiple circuits in parallel by connecting its pairs in a daisy chain configuration. It can also be used for high-speed switching applications, when used in combination with a CMOS inverter circuit.

Working Principle

The NSBC114YPDXV6T5G pre-biased transistor array works on the principle of using a complementary pair of transistors to create a single bi-directional device, allowing current to flow in both directions. It works by the application of a positive or negative voltage to the gate of one of the two transistors in the pair, which then either turns on or turns off the transistor, thereby switching the current in both directions. The current through the respective transistors is determined by the biasing current, which is adjustable and can be set accordingly. The pre-biased transistor array offers excellent features such as very low “on-state” resistance, high switching thresholds, and low-voltage high-current operation. It also offers excellent noise rejection and dynamic characteristics. This is attributed to the simple gatewide decoupling capacitor, which is used to reduce the effect of high frequency noise.

Conclusion

The NSBC114YPDXV6T5G pre-biased transistor array offers excellent features for various applications such as level shifting, switching, power management, and voltage regulation. The device employs a simple gatewide decoupling capacitor for noise rejection and provides excellent dynamic characteristics. Due to its pre-biased configuration, it can also be used in a daisy chain configuration to control multiple circuits in parallel.

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