NSBC115EDXV6T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSBC115EDXV6T1GOSTR-ND |
Manufacturer Part#: |
NSBC115EDXV6T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.5W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | NSBC115EDXV6T1G Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.06549 |
8000 +: | $ 0.06152 |
12000 +: | $ 0.05755 |
28000 +: | $ 0.05292 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 100 kOhms |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBC115EDXV6T1G is a product within the Transistors - Bipolar (BJT) - Arrays, Pre-Biased family. It is a pre-biased, high-performance, high-voltage, low capacitance array that offers a wide range of benefits. Any applications that require the features and capabilities of this type of device can make use of the NSBC115EDXV6T1G.
This versatile array is designed for use in high-performance, high-voltage switching and protection applications. Examples of these applications include high-frequency DC-DC conversion, low-voltage logic, and high-voltage isolator circuits. The device offers high-speed, low-distortion operation, and can be used to replace bulky discrete components. It also provides low capacitance for improved performance, as well as a wide operating temperature range for improved reliability.
In any application that requires high-performance, high-voltage switching and protection, such as DC-DC converters and low-voltage logic circuits, the NSBC115EDXV6T1G offers a valuable solution. The pre-bias feature of the device provides a wide range of benefits. Pre-bias reduces the input capacitance, which aids in the high-speed switching and protection. It also reduces the power consumption, while providing increased ESD and latchup protection. Finally, the pre-bias feature improves the drive current compared to an equivalent stand-alone device.
The NSBC115EDXV6T1G is designed to provide a low input capacitance. This allows for high-speed switching, as well as protection from over-voltage and latchup. The low capacitance also allows operation at higher frequencies, with less distortion. The high-voltage capabilities of the device also increase its application range. The device has a wide operating temperature range, which ensures that it can be used in any application or temperature environment.
The device is constructed of NPN and PNP transistors in a single package, with a total of 115 elements. The outputs of the device are designed for low capacitance for high speed, high performance, switching and protection. The device is also designed with an ESD rating of up to 7.5 kV, to help prevent damage from electrostatic discharge.
The NSBC115EDXV6T1G offers all the features to meet the needs of any high-performance, high-voltage switching and protection applications. Its pre-bias feature reduces input capacitance for improved performance, while its wide operating temperature range increases reliability. The low input capacitance and high-voltage capabilities of the device maximize its performance, making it the ideal device for use in DC-DC converters and low-voltage logic circuits.
The specific data is subject to PDF, and the above content is for reference
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