
Allicdata Part #: | NSBC114EPDXV6T5G-ND |
Manufacturer Part#: |
NSBC114EPDXV6T5G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | ![]() |
Quantity: | 1000 |
8000 +: | $ 0.04820 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NSBC114EPDXV6T5G, a packaged branch circuit breaker, is a type of bipolar junction transistor array that is pre-biased. The pre-biased array is formed by connecting serially the collector, base and emitter of a single BJT. This type of device is commonly used for current sensing and outputting for industrial and automotive applications.
NSBC114EPDXV6T5G features an integrated gate-drive circuit that provides a high-level of operational and temperature stability. The device also comes with an active output voltage adjustment feature that allows it to be set to different output voltages, allowing the current sensing and outputting to be customized to a wide variety of application scenarios.
The NSBC114EPDXV6T5G is also very energy efficient and has a low power dissipation design which is beneficial in many applications where an energy efficient device is desired. This makes the device a great choice for long-term applications that require reliable performance such as those found in the automotive sector.
The working principle of the NSBC114EPDXV6T5G is based on the principle of BJT operation. A BJT consists of a base, collector, and emitter junction. The base junction is forward biased and the collector junction is reverse biased. When there is no voltage applied to the base, electrons are drawn from the base to the collector by the reverse bias voltage of the collector junction. As a result, a large current flows from the collector to the emitter junction. This current is used to sense and output the voltage. The voltage output is then used to control the output of the device. This device is typically used in industrial or automotive applications to provide regulated current sensing or outputting.
NSBC114EPDXV6T5G is suitable for use in a wide range of applications where current sensing and outputting are required such as automotive, industrial and home appliances. It is also a good choice for applications that require high-level of performance, energy efficiency, and low power dissipation. This device is easy to use and can be easily incorporated into a variety of applications with its wide output voltage range and integrated gate-drive circuit.
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