NSBC123TDP6T5G

DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Base Part Number:	NSBC1*
Supplier Device Package:	SOT-963
Package / Case:	SOT-963
Mounting Type:	Surface Mount
Power - Max:	339mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	--
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<h2>Introduction</h2>NSBC123TDP6T5G is a transistor array product that can be classified into the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The device features multiple transistors pre-biased (i.e. with a predetermined base-emitter voltage applied and ready to be switched) and capable of driving very high currents and voltages with excellent linearity. The device is designed to be used as an intelligent power device, providing both high- and low-signal conditioning capabilities. <h2>Application Field</h2>NSBC123TDP6T5G can be used in many different applications where a high-performance and high-power transistor array is required. Examples of such applications include: • Industrial motor control, providing precise and reliable on/off control for motors and other load sources. • Automotive engine control and other automotive applications, providing efficient and reliable on/off control for a variety of automotive components. • Home automation, providing intelligent control over a variety of household appliances. • Power supplies, providing efficient and reliable switching for high-power loads. • Power line communications, providing reliable and efficient communication between devices connected to the power system. • RF power amplifiers, providing high output power levels and efficient operation for radio systems. The NSBC123TDP6T5G is designed to provide very high power performance while maintaining excellent linearity and low thermal dissipation, allowing it to be used in a variety of demanding applications. <h2>Working Principle</h2>The NSBC123TDP6T5G is an array of pre-biased power transistors which are capable of handling very high currents and voltages with excellent linearity. The device is designed to provide reliable and efficient switching for a wide range of loads. The working principle of the device is based on the use of the transistor array. The array consists of multiple transistors, each with a predetermined base-emitter voltage applied and ready to be switched. The transistors are connected in parallel, with each transistor capable of handling a maximum current of 20A. When the transistor is switched, a positive voltage is applied to the base-emitter junction, switching it on and allowing current to flow through the load. The transistors are also connected in series, so that when the base-emitter voltage is applied, the current is divided between the transistors. This allows the device to effectively handle higher voltages, as well as providing a level of redundancy in case of any transistor failure. <h2>Conclusion</h2>In conclusion, the NSBC123TDP6T5G is a transistor array product that can be classified into the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The device features multiple transistors pre-biased and capable of driving very high currents and voltages with excellent linearity. The device is designed to be used as an intelligent power device, providing both high- and low-signal conditioning capabilities. The working principle of the device is based on the use of the transistor array, which is designed to provide reliable and efficient switching for a wide range of loads.

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