NSBC143EF3T5G Allicdata Electronics
Allicdata Part #:

NSBC143EF3T5G-ND

Manufacturer Part#:

NSBC143EF3T5G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 254MW SOT1123
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: NSBC143EF3T5G datasheetNSBC143EF3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06767
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123
Base Part Number: NSBC1*
Description

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The NSBC143EF3T5G is a type of single pre-biased bipolar junction transistors (BJT). BJTs are semiconductor devices that are most commonly used for amplifying or switching electrical signals. A BJT is composed of two separate point-contact diodes that are connected together in a circuit layout, with a connection between them called the emitter-base junction. The NSBC143EF3T5G is a type of BJT specifically designed to be pre-biased, or pre-assembled in a circuit configuration to simplify usage.

The operation of a pre-biased BJT is similar to other types of BJT. An input signal is applied to the emitter-base junction. This voltage forward-biases the emitter-base junction, allowing current to flow across the junction and through the base of the transistor. As a result, this voltage will cause an increase in the current through the collector to the emitter. This change in current is amplified due to the collector-emitter junction, which is reverse-biased.

The NSBC143EF3T5G is specifically designed for use in high-speed switching applications. These applications require transistors to switch off and on quickly with minimal power consumption and minimal noise generation. The NSBC143EF3T5G is ideal for such applications because of its fast switching speed and low power consumption.

The NSBC143EF3T5G is a highly-integrated single pre-biased BJT, meaning all of its components are pre-assembled in one integrated circuit. This makes assembly and installation simple and straightforward. Furthermore, the forward-biased emitter-base junction allows the transistor to activate quickly with minimal power consumption and noise generation. The device is capable of operation up to 6GHz with a low supply voltage of 5.5V.

The NSBC143EF3T5G is commonly used in various high-speed switching applications, including wireless communications and military applications. The device is capable of operating in temperatures up to 85°C with a wide range of operating frequencies up to 6GHz. This makes it ideal for high-speed and high-temperature applications.

Overall, the NSBC143EF3T5G is a single pre-biased BJT specifically designed for use in high-speed switching applications. The device is highly-integrated and can operate at temperatures up to 85°C with a wide range of operating frequencies up to 6GHz. This makes it ideal for high-speed and high-temperature applications.

The specific data is subject to PDF, and the above content is for reference

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