NSBC124XDXV6T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSBC124XDXV6T1GOSTR-ND |
Manufacturer Part#: |
NSBC124XDXV6T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS DUAL NPN SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | NSBC124XDXV6T1G Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.06549 |
8000 +: | $ 0.06152 |
12000 +: | $ 0.05755 |
28000 +: | $ 0.05292 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBC124XDXV6T1G is a unique transistor array manufactured by ON Semiconductor — one of the leading semiconductor companies in the world. The NSBC124XDXV6T1G is part of ON Semiconductor’s bipolar (BJT) transistor array family, falling into its pre-biased category.
The NSBC124XDXV6T1G is a Pre-Biased Bipolar (BJT) transistor array with four transistors in each package. It is made of two individually-addressable transistor cells containing two transistors in each cell. These two transistors are individually addressed and can act independently or can be combined to form a single, larger transistor. When the two transistors are combined, they form a basic single-transistor circuit.
The NSBC124XDXV6T1G is a low-powered, low-voltage transistor array, making it an ideal choice for portable or battery-operated equipment. This transistor array also features high collector-to-emitter voltage, allowing it to handle up to 40 volts. This makes the NSBC124XDXV6T1G an excellent choice for connecting analog and digital power supplies. Additionally, the NSBC124XDXV6T1G’s low collector-to-base voltage means it can be easily used to switch larger currents and voltages.
The NSBC124XDXV6T1G is designed for a wide array of applications, including digital pre-amplifiers, low dropout regulators, signal switching, and current-sensing and reference circuits. The NSBC124XDXV6T1G is also commonly used for motor control and speed control, as well as drive circuits for power switches and relays.
The NSBC124XDXV6T1G is based on the same basic principles as any other bipolar transistor, including the amplification of signals. In a bipolar transistor, a current that enters the base will cause a much larger current to be generated from the collector. The larger collector current is the amplified signal. This amplification effect is what makes bipolar transistors so useful for many applications.
The NSBC124XDXV6T1G is designed for high-speed operation, making it ideal for applications that require quick response and accurate data. Additionally, this transistor array operates at very low power levels, which makes it a good choice for battery-operated devices that must be extremely efficient.
By taking advantage of the power of the NSBC124XDXV6T1G’s amplification effect, engineers are able to create a wide range of applications such as low dropout regulators, digital pre-amplifiers, and speed control systems. The NSBC124XDXV6T1G provides an excellent solution for engineers looking to maximize their design options while improving the efficiency of their circuit.
The specific data is subject to PDF, and the above content is for reference
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