NSBC123EDXV6T1 Allicdata Electronics
Allicdata Part #:

NSBC123EDXV6T1OS-ND

Manufacturer Part#:

NSBC123EDXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC123EDXV6T1 datasheetNSBC123EDXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Series: --
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NSBC123EDXV6T1 belongs to the category of transistors known as bipolar (BJT) arrays, pre-biased. It is a dual NPN array consisting of two pre-biased transistors encased in a ceramic surface mount package. The pre-bias of the two transistors ensures a very low power consumption and low current consumption for the circuit. The part number indicates that there are three pins in the package and the 6T1 suffix indicates that the two transistors are connected in series.

The application field for NSBC123EDXV6T1 is mainly for power circuits, such as for automotive applications, or for other power management systems. The low current consumption of the pre-biased transistors make it an ideal choice for use in power management systems, as it can provide low switching noise and high efficiency when used in Switch Mode Power Supplies (SMPS). In addition, the low power consumption makes the part ideal for applications with space constraints while still providing reliable and efficient operation.

The NSBC123EDXV6T1 works by using the bipolar effect of the two transistors. Two types of currents—collector current and emitter current—are the main determinants of the device’s performance. The high value of current in the collector side encourages a large number of electrons to travel through the transistor and enter the emitter side. This increase in the number of electrons leads to an increase in current flow on the emitter side of the transistor. This transfer of current from collector to emitter can also be used to activate a load or provide power to a device.

The NSBC123EDXV6T1 is an extremely versatile component. It can be used for a variety of different applications including power circuits, and is suitable for use in high density leadless packages. It is an excellent choice for energy efficiency and device reliability due to the low current consumption and the pre-biased transistors. With its efficient operation and robust performance, NSBC123EDXV6T1 is an ideal choice for applications that require low power consumption and reliability.

The specific data is subject to PDF, and the above content is for reference

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