NSBC124EPDP6T5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	SOT-963
Supplier Device Package:	SOT-963

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Introduction

The NSBC124EPDP6T5G is a bipolar (BJT) transistor array that consists of six indepentent NPN transistors. It is pre-biased and can be used in various applications across different industries, such as consumer electronics, automotive, and telecommunications. Additionally, the NSBC124EPDP6T5G features high switching speed, low voltage drop, and high current rating, making it suitable for use as a power switch. In this article, we\'ll examine the application fields and working principle of the NSBC124EPDP6T5G.

Application Field

The NSBC124EPDP6T5G is a pre-biased transistor array that can be used for various applications that require high switching speed and low voltage drop. It has very low thermal resistance, making it suitable for use in consumer electronics and automotive applications. Additionally, the NSBC124EPDP6T5G\'s high current rating makes it ideally suited for use as a power switch in telecommunication applications.

Working Principle

The NSBC124EPDP6T5G is a pre-biased transistor array, meaning that each of its six NPN transistors are pre-biased by the manufacturer. This ensures that the transistors will remain in the On-state at all times when the load is applied. When the base voltage is increased above the threshold voltage, current will flow from the Collector to the Emitter, thus turning the transistor on. When the base voltage is reduced below the threshold voltage, the current will be cut-off and the transistor will turn off. This is the basic principle of operation for a pre-biased transistor array.

Conclusion

The NSBC124EPDP6T5G is a pre-biased transistor array that is suitable for use in various applications across different industries. It is ideal for use as a power switch in telecommunication applications due to its high current rating and low voltage drop. Additionally, the NSBC124EPDP6T5G\'s low thermal resistance makes it suitable for use in consumer electronics and automotive applications. It operates according to the basic principle of pre-biased transistors; when the base voltage is increased, current will flow from the Collector to the Emitter and the transistor will turn on; when base voltage is decreased, the current will be cut-off and the transistor will turn off.

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