NSBC113EPDXV6T1G Discrete Semiconductor Products

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The NSBC113EPDXV6T1G is part of NXP\'s range of transistors rated for high-voltage, high-current applications. Typically used with power amplifiers, waveform generators and power supplies, the NSBC113EPDXV6T1G is a Pre-Biased Bipolar Junction Transistor (BJT) Array. Benefitting from NXP\'s expertise, this BJT array has been developed to provide superior performance and reliability in high-voltage, high-current applications. Additionally, the device\'s low noise and drift characteristics make it suitable for signal applications too.

Stated more clearly, the NSBC113EPDXV6T1G is a high-voltage, high-current BJT array designed for use in power amplifiers, waveform generators and power supplies. It has been designed to provide superior performance and reliability compared to standard BJT arrays and its low noise and drift characteristics make it suitable for signal applications. The device consists of six N-type BJTs, with integrated ESD protection for enhanced robustness. Additionally, the device has a 5V bias voltage, reducing power consumption and providing a fully-referenced output.

The working principle of the NSBC113EPDXV6T1G is similar to that of an ordinary BJT. The device operates with an active working voltage of up to 200V. Depending on the bias voltage, the device can be used in either a switching or linear mode. In the switching mode, the device behaves like an ordinary N-type BJT, with a breakdown voltage of around 100V and a low saturation voltage of around 2V. In linear mode, the device behaves like an amplifier, delivering a high gain and a flat frequency response. The device has a maximum output power rating of 300W and a maximum output voltage of 30V.

The device is well-suited to a range of high-voltage, high-current applications. The device has a wide operating temperature range, from -50C to 150C, making it suitable for use in a range of environments. The device also requires very little power, with a maximum supply voltage of 5.5V and a maximum power dissipation of 5W. Additionally, the device is designed for high EMC environments, thanks to its integrated ESD protection and rugged construction.

Due to its high power rating and low noise output, the NSBC113EPDXV6T1G is ideal for use in waveform generators and power amplifiers. Additionally, the device\'s low power dissipation and wide operating temperature range make it suitable for use in automotive and industrial applications. In signal applications, the device\'s low noise and drift characteristics make it well-suited for high-frequency analog signal processing.

In summary, the NSBC113EPDXV6T1G is a high-voltage, high-current Bipolar Junction Transistor (BJT) array designed for use in power amplifiers, waveform generators and power supplies. It has been designed to provide superior performance and reliability compared to standard BJT arrays, with a wide operating temperature range and integrated ESD Protection for enhanced robustness. The device has a maximum output power rating of 300W and a maximum output voltage of 30V. Additionally, the device\'s low noise and drift characteristics make it suitable for signal applications. This makes it well-suited to a variety of high-voltage, high-current applications, from automotive and industrial applications to high-frequency analog signal processing.

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