NSBC143ZDXV6T1 Allicdata Electronics
Allicdata Part #:

NSBC143ZDXV6T1OS-ND

Manufacturer Part#:

NSBC143ZDXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC143ZDXV6T1 datasheetNSBC143ZDXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NSBC143ZDXV6T1 is an innovative transistor array designed specifically for pre-biased applications. It is composed of integrated transistors, each including its own base and collector, separated by a PN barrier diode. This diode allows the array to provide a variety of bias voltages that can be configured to create a wide range of amplifiers and other circuits.

The device is composed of two sets of transistors, referred to as the emitter array and the driver array. Each of these contains two terminal pairs, one plus and one minus. The emitter array consists of two sets of transistors connected in series, with each set connected to either the positive or negative terminal. The driver array has four sets of transistors connected in series, with each set connected to one of the four terminal pairs.

In order to use the device as a pre-biased amplifier, one must first create a bias voltage. To do this, a voltage is applied to each of the terminal pairs, and the desired bias is then generated by adjusting the current through the resistors associated with each pair. As the bias voltage is applied, it causes the transistors in the emitter array to begin current flow; this current flow, in turn, causes the transistors in the driver array to begin to carry varying amounts of current that can be used to create an amplifier.

In order to create an amplifier, one must also configure the two transistors in each set of the driver array. This is accomplished by setting the base current of the two transistors to create either a non-inverting or inverting configuration. This process is necessary in order to ensure that the effective gain of the amplifier is maximized, and the overall performance of the circuit is optimized.

In addition to providing a pre-bias voltage, the NSBC143ZDXV6T1 also includes a built-in diode for protection. The diode is used to protect the circuit from over-voltage or over-current conditions. This prevents the transistors from being damaged, and eliminates the need for external protection devices. The device also includes an integral heat sink, which helps to keep the transistors cool and prevent overheating.

Overall, the NSBC143ZDXV6T1 device is an excellent solution for creating pre-biased amplifiers. It is simple to configure, includes built-in protection and cooling, and is capable of providing a wide range of bias voltages so that optimal performance can be achieved. With its versatility and robust design, it is a great choice for applications where pre-biased amplifiers are required.

The specific data is subject to PDF, and the above content is for reference

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