NSBC143ZF3T5G Allicdata Electronics
Allicdata Part #:

NSBC143ZF3T5G-ND

Manufacturer Part#:

NSBC143ZF3T5G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 254MW SOT1123
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: NSBC143ZF3T5G datasheetNSBC143ZF3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.04139
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123
Base Part Number: NSBC1*
Description

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The NSBC143ZF3T5G is a single, pre-biased, bipolar junction transistor (BJT). It is suitable for a variety of commercial and industrial applications, such as computers, automotive electronics, and audio amplifiers. This article will discuss the application field and working principle of the NSBC143ZF3T5G.

General Description

The NSBC143ZF3T5G is a single, pre-biased, bipolar junction transistor (BJT). It is manufactured by NEC Electronics and is RoHS compliant, with a rating of -30V @ 100mA, a breakdown voltage of -30V, and a maximum collector-emitter voltage of 30V. The package size is TO-220AB, and the case temperature range is -55C to +125C.

Application Field

The NSBC143ZF3T5G can be used in a variety of applications. It is most commonly used as a power amplifier in computers, automotive electronics, and audio amplifiers. It is also suitable for other applications, such as motor control, switching regulators, voltage regulators, and adjustable gain amplifiers.

Working Principle

The NSBC143ZF3T5G is a pre-biased bipolar junction transistor (BJT). The device functions by allowing a small current to flow through the base region of its semiconductor material, which induces a larger current to flow through the collector and emitter regions. This is done by using a base-emitter voltage to control the current flowing through the base, and the current flowing through the emitter and collector. An amplifier circuit can then be used to amplify the current, allowing for a wide range of voltage gains. The device is also capable of providing a constant output voltage across various load conditions.

Conclusion

The NSBC143ZF3T5G is a single, pre-biased, bipolar junction transistor (BJT). It is suitable for a variety of applications, such as computers, automotive electronics, and audio amplifiers. It is capable of providing a constant output voltage across various load conditions, and can be used as a power amplifier for a wide range of voltage gains. The device is manufactured by NEC Electronics and is RoHS compliant.

The specific data is subject to PDF, and the above content is for reference

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