
Allicdata Part #: | NSBC114EDXV6TOSCT-ND |
Manufacturer Part#: |
NSBC114EDXV6T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.5W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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NSBC114EDXV6T1 is an array of bipolar junction transistors (BJT) that are pre-biased for enhanced performance. This array is a small, low-power and space-saving solution for applications that require a high-level of robustness and accuracy. The array has been designed to be used in a wide range of applications and is suitable for use in power control, signal amplification and signal conditioning.
The NSBC114EDXV6T1 array consists of four individual transistors, each with a different collector to base bias voltage range and a different collector to emitter voltage range. The four transistors are connected in parallel so they can be used in a wide range of configurations and can operate independently or together. The array has also been designed to be used with a single bias voltage to simplify setup and operation.
The NSBC114EDXV6T1 array has been designed to provide a wide range of benefits including robustness, low-power consumption, fast response time and high-level accuracy. The robustness of the array is achieved through the use of thick-film resistors and other passive components, which are used to provide stable performance over temperature. The low-power consumption of the array makes it ideal for applications that require a low-power solution. The fast response time ensures that the array is able to quickly adjust to changing conditions, while the high accuracy ensures that the desired performance can be achieved.
The working principle of the NSBC114EDXV6T1 array is based on the fact that the transistors are pre-biased. This means that the collector to base bias voltage of the array is already set before it is powered up. This eliminates the need for additional components to control the bias voltage and makes the array easier and faster to set up. The pre-biased transistors then form a stable circuit configuration which can operate at a wide range of supply voltages and temperatures with minimal changes.
The NSBC114EDXV6T1 array is suitable for applications in power control, signal amplification and signal conditioning. It can be used to reduce power consumption by controlling power output, helping to improve energy efficiency. It is also ideal for use as an amplifier as it can provide high-level gain, high-level accuracy and low-noise performance. Lastly, the array can be used in signal conditioning applications to ensure a high-level of accuracy and stability in the desired signals.
In conclusion, the NSBC114EDXV6T1 array is a versatile array of bipolar junction transistors (BJT) that are pre-biased for enhanced performance. This array offers high-level accuracy, low-power consumption and fast response time, making it suitable for a wide range of applications in power control, signal amplification and signal conditioning. The pre-biased transistors of the array make it easier and faster to set up and provide a stable circuit configuration that can operate at a wide range of supply voltages and temperatures.
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