NSBC123JPDXV6T1 Allicdata Electronics

NSBC123JPDXV6T1 Discrete Semiconductor Products

Allicdata Part #:

NSBC123JPDXV6OSTR-ND

Manufacturer Part#:

NSBC123JPDXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN/PNP SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: NSBC123JPDXV6T1 datasheetNSBC123JPDXV6T1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

The NSBC123JPDXV6T1 is a pre-biased, NPN-PNP transistor array with a low power supply. This transistor array provides temporary base bias of the first and second transistors, thus providing a significant increase in system drive capability and performance. The aim is to reduce the resistive loss and reverse bias junction potential of the transistor array. This helps to reduce power supply requirements, lower power costs and improve power performance.

Application Field

The NSBC123JPDXV6T1 transistor array is designed primarily for use in automotive, home appliance and industrial applications that require low power consumption and high-performance drive capability. This transistor array is well-suited for applications such as communication interface circuits, power amplifiers and voltage converters. Additionally, the NSBC123JPDXV6T1 transistor array is particularly suitable for providing temporary base bias to bigger PNP-NPN driver circuits involved in motor control, switching, linear and pulse motor control, and electronic power conversion.

Working Principle

The NSBC123JPDXV6T1 transistor array contains two pre-biased transistors that are mounted on top of one another. It comprises of two sets of collector-emitter junctions that are connected in series. The first transistor in the array serves as the power supply input, while the second transistor serves as the output. The two transistors provide the necessary current gain and reduced-voltage drop across the array. By providing a pre-biased drive current to the array, the resistive loss and reverse bias junction potential of the array can be reduced.

The integrated circuits on the NSBC123JPDXV6T1 transistors provide control, protection and monitoring of the array. The integrated circuits also provide a temperature monitor and auto shutdown features. This ensures that the array remains within the safe operating parameters and extends its useful life. Furthermore, the array is designed for low power operation, and hence provides high-efficiency operation, helping to reduce power losses.

The NSBC123JPDXV6T1 transistor array is an ideal solution for automotive, home appliance and industrial applications that require low power consumption. It offers superior power performance, low power supply requirements, and low noise operation. With its integrated temperature monitor and auto shutdown, it is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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