NSBC144EF3T5G Allicdata Electronics
Allicdata Part #:

NSBC144EF3T5G-ND

Manufacturer Part#:

NSBC144EF3T5G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 254MW SOT1123
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: NSBC144EF3T5G datasheetNSBC144EF3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.04139
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123
Base Part Number: NSBC1*
Description

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Introduction to NSBC144EF3T5G

NSBC144EF3T5G is a type of pre-biased bipolar single transistor designed to serve as a switch or amplifier. It is a common choice for many applications due to its reliability, energy efficiency and low cost.

Use and Application Field of NSBC144EF3T5G

NSBC144EF3T5G transistors are widely used in many different applications, most notably in telecommunications and audio systems. They are also common in AC-DC power supplies, digital circuits, motor drives and operational amplifiers.In telecommunications, NSBC144EF3T5G transistors are used as switches and amplifiers to process digital signals. In audio systems, they are used to eliminate crosstalk and improve audio quality by acting as a buffer or amplifier.

Designing and Working Principle of NSBC144EF3T5G

The design of a NSBC144EF3T5G transistor consists of a PNP configuration of three layers and a base terminal connecting them. The three layers are made up of two N-type layers and one P-type layer. When signal is applied to the base terminal, the electrons in the N-type layer move to the P-type layer and cause current to travel through the emitter and collector. This is known as the biasing effect. The electrons in the P-type layer are then drawn back through the base terminal, and this cyclic effect causes the transistor to amplify or switch the signal.

Conclusion

NSBC144EF3T5G transistors are an excellent choice for many different applications due to their reliability, energy efficiency and low cost. They are commonly used in telecommunications and audio systems, AC-DC power supplies, digital circuits, motor drives and operational amplifiers. As a pre-biased single transistor, NSBC144EF3T5G works on the principle of biasing, in which the electrons in the N-type layer move to the P-type layer when signal is applied to the base terminal.

The specific data is subject to PDF, and the above content is for reference

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