Allicdata Part #: | NSVBC114YPDXV6T1G-ND |
Manufacturer Part#: |
NSVBC114YPDXV6T1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP 50V SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVBC114YPDXV6T1G Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.07204 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The NSVBC114YPDXV6T1G is a pre-biased, bipolar junction transistor (BJT) array. A BJT is a type of transistor that carries and switches current in between two or more terminals, making it an ideal choice for use in circuits that require electrical signals to be transmitted quickly and efficiently. The pre-biasing of the array allows for a high speed response, making it suitable for use in a wide range of applications, such as the control of storage or output in digital logic circuits.
The array uses three active transistors, two of them being connected in series, and one in parallel. The two transistors in series are the collector and base, and the one in parallel is the emitter. When a voltage is applied to the base, the transistor will switch on as current passes through the collector and emitter. This current is used to control the flow of electrons through the circuit. The NSVBC114YPDXV6T1G can handle currents up to 100mA and voltages of up to 50V.
This array has a number of advantages over other types of transistors, including the ability to operate at higher frequencies, low power consumption, and a lower noise figure. The low power consumption makes it suitable for battery-powered applications, while the higher frequency range allows it to be used in high-speed communication systems. It is also often used as a voltage regulator, as it is able to provide a stable voltage level even if the input voltage varies.
In addition to its use in high-speed communication systems, the NSVBC114YPDXV6T1G is also used in a variety of other applications. It can be used in audio amplifiers, power supplies, low-voltage circuits, and even automotive electronics. It is also used to make logic circuits, such as logic gates and flip-flops. It is also suitable for use in digital signal processing, an area which is becoming increasingly popular with modern electronics.
The array is available in a dual package configuration, which is ideal for saving space in tight spaces. It is also RoHS compliant, meaning that it meets the requirements of the Restriction of Hazardous Substances Directive, which is a European Union law that regulates the use of hazardous materials in electrical and electronic equipment.
Overall, the NSVBC114YPDXV6T1G pre-biased BJT array is a versatile and reliable transistor that is suitable for a wide range of applications. It is able to operate at higher frequencies, has low power consumption and a low noise figure, and is RoHS compliant. Due to its wide range of applications, the NSVBC114YPDXV6T1G is an ideal choice for both consumer and industrial electronics.
The specific data is subject to PDF, and the above content is for reference
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