NSVBC143TPDXV6T1G

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NSVBC143TPDXV6T1G Application Field and Working Principle

The NSVBC143TPDXV6T1G is a pre-biased transistors array designed for various applications, particularly in high-power circuits. The device is comprised of a multiple silicon NPN transistors in a convenient 4-pin dual-in-line (DIP) package. Combining the array\'s low output capacitance with high gain, these devices are ideal for switching applications.

Features

• Low output capacitance
• High gain
• Available in a 4-pin dual-in-line (DIP) package
• Wide range of temperature grades
• High power dissipation

Application Field

The NSVBC143TPDXV6T1G pre-bias transistor array provides maximum ratings for collector-base breakdown voltage (V(BR)CBO) of 30V, collector-emitter breakdown voltage (V(BR)CEO) of 200V, emitter-base breakdown voltage (V(BR)EBO) of 5V, collector current (Ic) of 2.5A and power dissipation of Pd of 2W. This device is ideally suited for high-power switch mode applications. It can be used as a simple on-off switch or in more complex switching circuits. It is also suitable for driving large loads requiring high current and high voltage levels.

The NSVBC143TPDXV6T1G device is also ideal for use in high-performance analog circuits such as pulse width modulators, power inverters, motor controls, and Class-D amplifier filter networks. Its low capacitance helps with high-speed switching applications and its high power dissipation allows it to drive large loads with high current and high voltage levels.

Working Principle

The NSVBC143TPDXV6T1G pre-bias transistor array is an NPN silicon die with a 4-pin dual-in-line (DIP) package. When voltage is applied to the base terminal (B) of the transistor, current will flow through to the collector terminal (C) due to the internal biasing resistor. This action is known as the "bias spread" and it is essentially responsible for the switching action of the device. The current can then be regulated through the emitter terminal (E) to control the device.

The collector current can be further modified by adjusting the transistor\'s base current with an external circuit. This is essentially done by using additional components such as resistors and capacitors to form a bias circuit. This circuit can then be used to fine-tune the operation and performance of the transistor array.

The NSVBC143TPDXV6T1G device\'s wide temperature range makes it suitable for a variety of applications and its high gain and low output capacitance make it a suitable choice for high-power switching and analog circuits.

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