NTB125N02R

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The NTB125N02R is a single-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that uses a new generation of N channel vertical DMOS (Depletion Mode MOSFET) technology to provide excellent control of the drain-source region. It is a thin-film, variable-threshold voltage technology device specifically designed for battery-operated, cost-sensitive applications. The NTB125N02R is available in a low threshold voltage version for use in DC-DC power converters and in a standard version for use in other applications.

This type of MOSFET is able to provide high speed switching, high-voltage withstand capability and low on state resistance with less switching power requirements when compared with other such devices. It also provides good reliability and improved total power efficiency under all operating conditions. With an ON-state resistance (Rdson) of only 9 milliohms and an ON-state current rating of 75 Amps, this MOSFET can easily switch higher currents than typical bipolar transistors.

The NTB125N02R is particularly useful in battery-powered applications, such as mobile phones, that require low power consumption and low current voltages from 0.6V to 5V. It is ideal for high-current switching applications, such as those used for the power switching in small, low-power DC-DC power converters and buck-boost converters. It can also be used for applications such as motor control and for switch mode power supplies.

The working principle of the NTB125N02R is based on the fact that a voltage applied across the gate terminals can control and regulate the conductivity of the n-channel metal-oxide-semiconductor. This conductivity is determined by the type of transistor, such as a p-channel MOSFET or an n-channel MOSFET. When the voltage applied through the gate terminals is higher than the threshold voltage, the resistance between the gate and the source will become very low, allowing current to pass through and allowing the MOSFET to be turned on. When the voltage falls below the threshold voltage, the resistance will not decrease, preventing current from flowing and turning off the switch.

In addition, the NTB125N02R has a number of other benefits, such as high output voltage and current capacity and low gate- sources capacitance, making it ideal for high speed switching applications. The device has a fast switching time (t_r of only 5ns) and a low Rdson, which help to reduce any power loss associated with the device. The device also has a relatively low ON-state voltage drop of only 4V and an ON-state leakage current of only 200µA, which helps reduce the quiescent current associated with the applications.

Overall, the NTB125N02R provides excellent performance in applications where high current, low-voltage switching is required. It is a cost-effective solution for applications such as motor control and power switching, and its low-weight, high-output capabilities make it an attractive choice for battery-powered devices.

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