Allicdata Part #: | NTB18N06-ND |
Manufacturer Part#: |
NTB18N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 15A D2PAK |
More Detail: | N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2... |
DataSheet: | NTB18N06 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTB18N06 is a single high-speed N-channel MOSFET designed to operate in power management applications. It is an enhancement-mode, vertical double-diffused metal-oxide-semiconductor (VDMOS) transistor. It features a high transconductance in a very small package that is perfect for low-voltage applications. The package of the NTB18N06 is a TO220-5 and is capable of dissipating up to 11 watts of power. The NTB18N06 has a continuous drain current rating of 18 A, a drain-source voltage (VDS) rating of 60 volts, and a maximum drain-source on-resistance (RDS(ON)) of 0.02 Ohms. It is suitable for applications where switching speed higher than 1MHz is required.
The primary application of the NTB18N06 is in power management. It is mainly used in switching power supplies and other power management applications that require low-voltage operation and high switching speed. It is also widely used in motor control and protection circuits, as well as other circuits that require fast switching. It is especially suitable for applications that require high frequency switching such as LED lighting, telecommunications, and computer systems. The low-voltage, high-speed performance of the NTB18N06 make it ideal for these applications.
The NTB18N06 functions like any other enhancement mode MOSFET. It is composed of a gate, a source, and a drain. The voltage applied to the gate of the MOSFET is important as it controls the flow of current through the device. When a voltage is applied to the gate, the device conducts, allowing current to flow from the source to the drain. When the gate voltage is removed, the device stops conducting and no current flows.
The NTB18N06 MOSFET has several features that make it ideal for power management applications, including its very low on-resistance, fast switching speed, and low-voltage operation. Its low on-resistance allows it to provide the maximum amount of current for a given voltage drop, making it ideally suited for low-voltage power management applications. Its fast switching speed allows it to switch very quickly, making it ideal for applications that require high-speed switching such as LED lighting, telecommunications and computer systems. Finally, its low-voltage operation allows it to be used in battery and other low-voltage power applications.
The NTB18N06 is a very versatile MOSFET device, making it suitable for many different applications. As such, it is one of the most popular MOSFETs used in power management applications. It is a fast, low-voltage device that is capable of providing reliable power supply performance, making it one of the most sought-after MOSFETs on the market today.
The specific data is subject to PDF, and the above content is for reference
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