NTB18N06LG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An NTB18N06LG is a power MOSFET transistors most commonly used in high-power, high-frequency switching applications. This N-Channel MOSFET is designed to have low on-resistance and low gate charge. The device has an integrated body-diode, which is designed to handle high forward current. Through improved design of the structure and materials, the NTB18N06LG can easily support a wide range of applications, from high-power supplies, variable frequency drive (VFD) to dc motor control and other high-power electronic control, regulating, and switching applications.

Application Field

The NTB18N06LG is designed for high-frequency switching applications such as dc-dc converters, dc motor drivers, and power supplies. It has a lower on-resistance and gate charge, which makes it suitable for switching applications that require fast response time, such as those in the power inverter and switching power supply fields. It can also be used to control high-power audio amplifiers and consumer electronics such as TVs, computers, and other devices.

Benefits of Using the NTB18N06LG

The NTB18N06LG features several benefits that make it a great choice for high-frequency switching applications. Its on-resistance is significantly lower than that of comparable devices. This, in turn, ensures lower switching loss and higher efficiency. Additionally, its gate charge is significantly lower, translating to higher switching speeds. Furthermore, its body-diode feature means that it can handle higher forward currents more efficiently, which translates to improved system reliability.

Working Principle

The NTB18N06LG is a type of Field-Effect Transistor (FET). A FET works on the principle of voltage-controlled resistance. It has source, drain, and gate terminals. The gate terminal is used to control the flow of current between the source and the drain terminals. Applying a voltage to the gate terminal causes a change in the channel between the source and the drain terminals. This change in channel causes a change in resistance, and thus allows current to flow. The advantage of a FET is that it can be used to precisely control the flow of current between the source and drain terminals.

Conclusion

The NTB18N06LG is an N-Channel MOSFET transistors typically used in high-power, high-frequency switching applications. It has a lower on-resistance and gate charge, which makes it suitable for fast-response switching applications. Additionally, its body-diode feature ensures that it can handle high forward currents more efficiently. The NTB18N06LG is great for applications that require high-power, high-frequency switching, such as dc-dc converters, dc motor drivers, and power supplies.

The specific data is subject to PDF, and the above content is for reference