Allicdata Part #: | NTB18N06G-ND |
Manufacturer Part#: |
NTB18N06G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 15A D2PAK |
More Detail: | N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2... |
DataSheet: | NTB18N06G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Power MOSFETs are well suited for applications that require high voltage capability, low RDS(on) resistance, and fast switching. The NTB18N06G is a N-channel enhancement mode Power MOSFET. It is capable of withstanding high voltage levels, and its low on-resistance is suitable for applications that require high efficiency and low power dissipation.
The NTB18N06G is ideal for switching applications up to 18V and is particularly well suited for AC/DC power applications that require fast switching, such as fire alarms and smoke detectors. It is also used in applications such as motor control and UPS systems, as well as for high-reliability signal conditioning applications. Because of its high voltage capability, the NTB18N06G is a popular choice for automotive applications where a high voltage tolerance is essential.
The NTB18N06G MOSFET is a three-terminal device that consists of a source, gate, and drain. The source is connected to the ground and the drain is connected to the load. When a positive voltage is applied to the gate, it creates a conducting channel between the source and the drain and allows current to flow from the source to the drain. The greater the voltage applied to the gate, the greater the current flowing through the MOSFET.
The NTB18N06G has a number of features that make it an ideal choice for power switching applications. It has a maximum Drain-to-Source Voltage (VDS) of 18V and a maximum Drain-to-Source Current (ID ) of 4A. Its on-resistance (Ron) is 0.25ohm, which is relatively low compared to other MOSFETs. This makes it suitable for applications that require high efficiency and low power dissipation.
The NTB18N06G is designed to operate at high frequencies, making it ideal for applications such as motor control, UPS systems, and high-reliability signal conditioning. It also has a fast switching speed, allowing for faster response time and improved system performance. Its high voltage tolerance and low on-resistance make it suitable for a wide range of power switching applications.
In addition to its performance characteristics, the NTB18N06G is manufactured using a state-of-the-art process that ensures it meets the highest manufacturing quality standards. The MOSFET is also RoHS compliant, meaning it does not contain any substances that could harm the environment.
In summary, the NTB18N06G is an N-channel enhancement mode Power MOSFET. It is well suited for applications that require high voltage capability, low on-resistance, and fast switching. It is most commonly used in AC/DC power applications, motor control systems, UPS systems, and high-reliability signal conditioning applications. The NTB18N06G is manufactured using a state-of-the-art process to meet the highest manufacturing quality standards, and it is RoHS compliant, ensuring it is safe for the environment.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NTB18N06LT4G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 15A D2PAK... |
NTB125N02RT4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 24V 15.9A D2P... |
NTB13N10T4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 13A D2PA... |
NTB18N06T4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 15A D2PAK... |
NTB125N02RT4 | ON Semicondu... | -- | 1000 | MOSFET N-CH 24V 15.9A D2P... |
NTB18N06T4 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 15A D2PAK... |
NTB18N06LT4 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 15A D2PAK... |
NTB125N02R | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 24V 15.9A D2P... |
NTB125N02RG | ON Semicondu... | -- | 1000 | MOSFET N-CH 24V 15.9A D2P... |
NTB13N10 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 13A D2PA... |
NTB13N10G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 13A D2PA... |
NTB18N06 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 15A D2PAK... |
NTB18N06G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 15A D2PAK... |
NTB18N06L | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 15A D2PAK... |
NTB18N06LG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 15A D2PAK... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...