NTB125N02RT4 Allicdata Electronics
Allicdata Part #:

NTB125N02RT4OSCT-ND

Manufacturer Part#:

NTB125N02RT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 24V 15.9A D2PAK
More Detail: N-Channel 24V 95A (Ta), 120.5A (Tc) 1.98W (Ta), 11...
DataSheet: NTB125N02RT4 datasheetNTB125N02RT4 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc)
Drain to Source Voltage (Vdss): 24V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The NTB125N02RT4 is a device designed for use in a variety of applications wherever power handling and small size are necessary. It is a high power, normally-on MOSFET which offers good thermal performance, as well as a high current handling capability. This device is designed with a low on-resistance, which makes it ideal for use in applications such as DC/DC converters, brushed motor control, and step-down regulators.

The NTB125N02RT4 is a single N-channel power MOSFET which falls into the family of transistors known as Field Effect Transistors (FETs). FETs are unipolar transistors which have a voltage control input, instead of an amp control as found in bipolar transistors. This enables them to be used as both a switch and a semiconductor amplifier. As a switch, FETs have both a high input impedance and a low output impedance, and can be used to switch currents or voltages between two circuits.

The working principle of a MOSFET is similar to that of a FET, however, they require voltage, rather than a current, to be applied to the control input. The applied volts change the conductivity of the channel between the source and the drain. As the applied voltage increases, the device moves from a cutoff state, where current does not flow, to an active state in which current can flow.

The NTB125N02RT4 features both a low on-resistance and a high current handling capability, enabling it to be used in power circuits. It also has an enhanced thermal capability which is due to its high power and small size. This makes it a desirable choice of device for applications such as DC/DC converters, brushed motor controls and step-down regulators, which need to handle large amounts of power in a small space.

In summary, the NTB125N02RT4 is a high power MOSFET which is designed for use in many applications. It offers a low on resistance, a high current handling capability, and enhanced thermal performance. This makes it ideal for use in applications such as DC/DC converters, brushed motor controls, and step-down regulators, where small size and high power are essential.

The specific data is subject to PDF, and the above content is for reference

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