NTB125N02RT4G

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The NTB125N02RT4G is a High Load, N-Channel MOSFET transistor, referred to as a HEXFET® power IC. Its a robust device which can withstand high current, making it suitable for a variety of applications such as power supply switching and transport applications.

The NTB125N02RT4G is constructed on an 8-pin SOICN package and contains a single N-channel MOSFET transistor. It has an on-state resistance of less than 2.5ohm at 1A gate current and a gate charge of less than 25nC relative to its maximum DC rating. The device also offers an effective protection against reverse capacitive charging and SOA package features that delivers improved performance and reliability.

The NTB125N02RT4G has a breakdown voltage rating of between 20V and 25V and can support up to 25A of continuous drain current at Tj = 25°C. It provides fast switching times, a low drive voltage and an operating temperature range from -55°C to +175°C. The transistors is designed for use in automotive, industrial, lighting, home appliance and computer applications.

The NTB125N02RT4G is a power MOSFET that is capable of switching a large amount of power and current at high frequencies. The device can be used in power supply design, power conversion, automotive electronics and applications such as radiofrequency switching, high voltage conversion and high current applications. The NTB125N02RT4G is also suitable for use in multiple applications such as pumps, lighting, vending machines, converters, lights and LEDs, power management, protection and switching.

The NTB125N02RT4G is a robust and high efficiency device with a low RDS (on). It has a high resiliency to temperature variation, preventing thermal overstress and degradation. The device also has a low gate drive voltage requirement and fast switching times, allowing for high switching efficiency.

The NTB125N02RT4G has a high gain and efficient performance, with a fast switching time for improved switching performance. Its ability to operate at high frequencies and withstand high load current makes it ideal for applications such as power supplies, lighting, sensors, displays and other power conversion circuits. Its wide operating temperature range and high tolerance to ESD makes the device suitable for the most demanding of applications.

In conclusion, the NTB125N02RT4G is a high performance, low on-state resistance and high current MOSFET power device. It has a wide operating temperature range, good tolerance to ESD and fast switching times. Its durable construction makes it well suited for industrial, automotive, lighting and computer applications. It provides low gate drive voltage requirement and improved reliability with effective protection against reverse capacitive charging.

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