NTB13N10G

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The NTB13N10G is an enhancement-mode nitrogen-doped E/D MOSFET optimized for low-voltage switching applications. Featuring a lower R DS(on) of 0.43Ω, improved theremalperformance, and low gate charge, NTB13N10G is better suited for higher power applications. This device is suitable for use in a broad range of applications, including H-bridge motor control, DC-DC converters, and common-drain high-side switching circuits.

NTB13N10G MOSFETs are built on a silicon substrate with an N-type channel that extends vertically from the source region to the drain. A metal-oxide-semiconductor field-effect transistor (MOSFET) utilizes a gate oxide to modulate the electrostatic attraction of the gate electrode to the semiconductor substrate, allowing electrons to traverse the channel between the source and the drain. As the gate voltage increases, the amount of electrons traversing the channel increases, resulting in an increase in the current.

An important attribute of the NTB13N10G is its low on-state resistance. This low resistance is due to the structure of the N-type channel as well as the highly doped gate oxide, which allows more efficient electron transport from source to drain. Additionally, the low-gate charge of the NTB13N10G allows for faster switching times and improved system efficiency.

When compared with other MOSFETs, the NTB13N10G has a 25% lower RDS(On), a higher temperature rating, and improved thermal performance. This makes it highly suitable for higher power switching applications, such as motor control, DC-DC converters, and high-side switching circuits. Additionally, the NTB13N10G is RoHS-compliant and is offered in both through-hole and SMD packages.

In conclusion, the NTB13N10G is an ideal choice for low voltage switching applications due to its low-RDS(on), high temperature rating, improved thermal performance, and low gate charge. This device is well suited for application in motor control, DC-DC converters, and high-side switching circuits. Its RoHS-compliant features and availability in through-hole and SMD packages further highlights its application flexibility.

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