NTB18N06T4G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	48.4W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	90 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NTB18N06T4G is a single MOSFETs from the transistors family. It is a power Trench MOSFET with a maximum voltage of 30V. It is optimized for use in low voltage applications and is available in the SOIC-8 standard small outline package for easy mounting. The NTB18N06T4G delivers higher performance than those from conventional MOSFET family, allowing it to be used in a wide variety of applications.

The NTB18N06T4G is an ideal device for power supplies and power conversion applications. It includes an ultra-low Rds(on) resistance and an optimized performance vs. gate charge trade-off. This makes it the ideal choice for applications where high current efficiency, fast switching times and low gate charge are essential. The NTB18N06T4G also features an integrated body diode to provide a soft switching waveform.

The NTB18N06T4G is designed to provide better reliability, lower Rds(on) and improved heat dissipation. The device incorporates an low resistance Current-Voltage Interconnect (CVI) structure, a high speed Gm process, and a MSOP-8 package with an improved thermal design. The NTB18N06T4G also has a low total gate charge which reduces switching losses and offers the highest power efficiency and performance in its class.

Due to its wide range of features, the NTB18N06T4G is widely used in various applications such as Automotive, Appliance, General Industrial, Industrial Automation & Motor Control, Medical Equipment, Networking System, Power Supply and Supply Chain/Logistics. It is suitable for applications such as HVAC, Smart Metering, Power Supplies, Battery Chargers, Motor Control, LED Lighting, and Solar Energy Inverters.

The working principle of the NTB18N06T4G is relatively simple. It is a three-terminal device containing an ohmic source and drain, with a gate electrode between them. When a control voltage is applied to the gate electrode, an inversion channel forms in the region between the source and drain terminals. This inversion channel forms a conducting path between the source and drain and this modulates the current through the device.

The NTB18N06T4G also features a low threshold voltage that enables it to be used in low voltage applications such as 3.3V and 5V systems. Additionally, its low gate resistance reduces the gate charge, enabling faster switching times and improved power efficiency. The device also includes an integrated thermal shutdown feature which protects the device in case of an over temperature event.

The NTB18N06T4G is a very versatile device and can be used in many applications. Its optimized performance makes it an ideal choice for applications where high current efficiency, fast switching times, and low gate charge are essential. Its integrated current-voltage interconnect structure, MSOP-8 package, and thermal design make the NTB18N06T4G an excellent choice for power supplies, motor control, automotive, industrial automation, and other applications.

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