NTB18N06T4

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Introduction

The NTB18N06T4 is a high-performance integrated N-channel MOSFET transistor device for high-voltage power applications. This device is the result of several years of research and development from the semiconductor industry and provides extreme performance to meet the market demands. The NTB18N06T4 has a number of features designed to make it suitable for use in a variety of power applications, including power switching, power amplification and pre-driver.

Application Field

The NTB18N06T4 was designed for applications such as increased efficiency and reliability of power drivers, high-speed power converters, power assist devices and power switching in high-voltage, high-speed switching operations. It is suitable for use in a wide range of power applications, including motor drive applications, high-voltage power supplies, high-voltage power switches, motor control systems and high-frequency power scalers.

Working Principle

The NTB18N06T4 is an integrated N-channel MOSFET power device that uses a gate-to-source voltage to control the voltage at which the device will operate and subsequently, the current conduction. Once the gate-to-source voltage is applied, an electric charge is created by the electrons in the MOSFET, which turns the device on and increases the conduction current. A negative gate-to-source voltage will deplete the charge and turn the device off, reducing the conduction current. This is known as the N-channel enhancement mode operation, which allows the device to be used as a high-power switch.

The NTB18N06T4 has a very high drain-to-source breakdown voltage and is capable of operating with both positive and negative voltage sourcing. This makes it ideal for AC/DC power applications and also reduces the need for protection components such as built-in fuses and load-dividers. In addition, the device has a low on-resistance, which increases its efficiency and reduces the amount of heat produced.

Features

The NTB18N06T4 offers a number of features designed to make it suitable for a variety of power applications. These include a low drain-to-source on-resistance, a wide operating temperature range (-55 °C to 150 °C), a super-junction construction, a high-voltage breakdown rating of 800V (Veb) and a wide range of package options. The device also features an integrated protection circuit which provides overvoltage protection and electrostatic discharge protection.

The NTB18N06T4 is also designed to be highly efficient while offering good thermal dissipation. This is achieved through the use of a super-junction construction which reduces the on-resistance of the device, as well as a unique layout which ensures effective heat dissipation. The device also features multi-level gate protection which increases its reliability and lifetime, as well as a variety of package styles which allows for easy implementation into existing systems.

Conclusion

The NTB18N06T4 is a high-performance integrated N-channel MOSFET transistor device that is designed for power applications, including power switching, power amplification, and pre-driver. The device offers a wide range of features, including a low drain-to-source on-resistance, a wide operating temperature range, and a super-junction construction. The device also features an integrated protection circuit and a variety of package styles for easy implementation.

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