Allicdata Part #: | NTB18N06LT4GOSTR-ND |
Manufacturer Part#: |
NTB18N06LT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 15A D2PAK |
More Detail: | N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2... |
DataSheet: | NTB18N06LT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 7.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTB18N06LT4G is a single N-Channel MOSFET that can provide both high current and high voltage protection in a wide variety of applications. Its low gate voltage makes it suitable for use in logic circuits, as well as high frequency switching applications. High operating temperature, low gate charge and low total gate charge make it ideal for use in power conversion and current limiting applications. As it is one of the most commonly used MOSFETs, it has a wide range of applications.
The NTB18N06LT4G is normally used when a load needs to be switched on or off. This can be done by applying a gate voltage to close or open the MOSFET, which acts as a switch. When the gate voltage is zero or below, the MOSFET is off. When the gate voltage is increased, the MOSFET will turn on and switch the load.
The NTB18N06LT4G is used in many applications such as the voltage regulation of switching power supplies, DC-DC conversion and current limiting. It can also be used in charging circuits, inverters and converters. In addition, it is used in various automotive applications such as engine management and energy management.
The main working principle of this MOSFET is based on the principle of electric field effect. This principle states that when a voltage is applied to the gate, it creates an electric field that attracts the electrons from the source. This causes them to flow towards the drain and switch the MOSFET on. As the MOSFET works on the principle of electric field effect, the gate voltage should be less than the voltage used to power the circuit.
The NTB18N06LT4G has many features that make it ideal for use in a range of applications. It has low gate-source capacitance and low total gate charge, making it suitable for use in high frequency applications. Also, it has a high breakdown voltage, making it suitable for use in automotive and industrial applications. Furthermore, it is resistant to surges and high voltages, making it a good choice for use in power conditioning applications.
The NTB18N06LT4G has various parameters which need to be taken in consideration when it is used in applications. These include its maximum operating temperature, its channel resistance and its voltage ratings. It is important to take into account all the parameters when designing an application in order to ensure its safety and reliability. Furthermore, some precautions need to be taken when it is used, such as ensuring that the gate voltage is never higher than the applied voltage.
Overall, the NTB18N06LT4G is an ideal choice for a wide range of applications as it provides both high current and high voltage protection with its low gate voltage. Its features and parameters make it suitable for a variety of applications, from power conversion to automotive and industrial applications. It is important to consider all parameters and precautions when using this MOSFET in order to ensure its safety and reliability.
The specific data is subject to PDF, and the above content is for reference
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