NTB13N10T4G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTB13N10T4G is a part of static induction transistors (SITs) which are primarily used for switching and amplification applications. SITs have an improved physical performance compared to other modern transistors and are suitable for high-frequency applications due to their high switching frequency speed.

The NTB13N10T4G is a 400V N-channel Enhancement Mode power MOSFET (MOSFET = Metal Oxide Semiconductor Field Effect Transistor) manufactured by Toshiba. It is a type of transistor commonly used in electronics when switching, amplifying, and controlling current. The NTB13N10T4G MOSFET has been designed and specified as an "enhancement mode switch."

The working principle of an N-channel MOSFET is based on the "Metal Oxide Silicon Field Effect Transistor" construction. The N-channel MOSFET is made up of four basic components: source, drain, gate, and body. The source and drain are two semiconductor regions separated by the body. The gate is an electric field that is generated between the source and drain. The gate is where the control voltage is applied. When this voltage is applied to the gate, it modifies the electric field and controls the current flow from source to drain.

The source of the NTB13N10T4G is connected to the negative voltage rail. The body is connected to the positive voltage rail and acts as a substrate. The gate is connected to the trigger voltage supplied by the microcontroller. When the trigger voltage is applied to the gate, it activates the transistor and allows current to flow from the source to the drain in an on-state. When the trigger voltage is removed, the transistor is in an off-state and no current flow will occur.

In terms of application fields, the NTB13N10T4G is typically used in power switching applications. It is particularly suitable for switching amplifiers, regulated power supplies, and high voltage inverters, in particular when frequency is an important factor. It can also be used in electronics circuits such as amplifiers, DC-DC converters, motor control circuits, motor speed controllers, lamp dimmers, and high-speed switching circuits.

Furthermore, due to its high switching speed, the NTB13N10T4G can be used in applications such as high-frequency power amplifiers, audio amplifiers, oscillators, microwave hearing aids, and wireless speakers. The NTB13N10T4G has the features of high breakdown voltage and low on-state resistance, which makes it well suited for a variety of high current and high frequency applications.

In conclusion, the NTB13N10T4G is a single N-channel enhancement-mode power MOSFET designed for use in high-frequency switching, amplifying, and controlling current applications. With its fast switching speed and low on-state resistance, it is ideal for a range of power semiconductor applications such as regulated power supplies, amplifiers, DC-DC converters, and wireless speakers.

The specific data is subject to PDF, and the above content is for reference