Allicdata Part #: | NTHD2102PT1OS-ND |
Manufacturer Part#: |
NTHD2102PT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 8V 3.4A CHIPFET |
More Detail: | Mosfet Array 2 P-Channel (Dual) 8V 3.4A 1.1W Surfa... |
DataSheet: | NTHD2102PT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 3.4A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 2.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 715pF @ 6.4V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | ChipFET™ |
Base Part Number: | NTHD2102P |
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NTHD2102PT1 is a FET array, which includes two N-channel field-effect transistors (FETs). This device is specially designed for applications requiring high ambient temperature range, high-speed switching and high current output capability. It has a wide variety of applications, from signal processing to high-frequency signal switching and switching amplifiers.
NTHD2102PT1 has two N-FETS which are integrated into one package. One gate of each FET is externally connected through three pins. The two FETs can be independently controlled, allowing the user to use them with different requirements. The other two pins serve as the output lines, which are connected to the corresponding outputs. NTHD2102PT1 further features low thermal impedance, low gate-to-source leakage current, low on-state resistance and high speed switching.
The working principle of NTHD2102PT1 can be described as follows. When a voltage is applied to the gate, it creates an electric field, which exerts its influence upon the source-drain region, thus enabling the current to flow freely between the source and drain. This enables the FET to act as a switch, opening or closing the flow of current depending on the gate voltage. By applying a higher voltage to the gate, the FET can provide higher source-drain current and better performance. The FET operates in saturation mode when its drain-source voltage exceeds the threshold voltage.
NTHD2102PT1 is a highly versatile FET array which can be used for various control and switching applications. It is mainly used in audio and video amplifiers, home theatre systems, communication systems, and power management systems. It can also be used in automotive, medical and military applications. Additionally, this device can be used in high-frequency switching amplifiers, which increases its potential of use significantly.
In conclusion, NTHD2102PT1 is a high-performance FET array and is widely used in various applications due to its high-speed switching, low thermal impedance and high output current capability. Its unique features make it a preferred choice for applications requiring high performance and reliability. It has a wide range of application fields and its working principle is relatively simple.
The specific data is subject to PDF, and the above content is for reference
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