| Allicdata Part #: | NTHD5905T1OS-ND |
| Manufacturer Part#: |
NTHD5905T1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2P-CH 8V 3A CHIPFET |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 8V 3A 1.1W Surface... |
| DataSheet: |  NTHD5905T1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | 2 P-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 8V |
| Current - Continuous Drain (Id) @ 25°C: | 3A |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id: | 450mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Power - Max: | 1.1W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SMD, Flat Lead |
| Supplier Device Package: | ChipFET™ |
Description
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NTHD5905T1 is an array of transistors, which offers a combination of high source and drain currents with low on-state resistance. This makes the NTHD5905T1 a suitable device for applications requiring low on resistance and low power dissipation, such as high power amplifier stages, power-switching circuits, audio and video circuits, computer communications, light sensing applications and others. The NTHD5905T1 is a two-bit array of n-type depletion-mode metal–oxide–semiconductor field-effect transistors (MOSFETs). It is composed of two n-type MOSFETs with equal gate widths, which are connected in series. This creates a double-gate MOSFET, which is placed in a high-speed SOIC package. In order to provide the desired characteristics, the NTHD5905T1 includes a high-speed input stage, a cascoded gate drive and a high-level output gate drive. The NTHD5905T1 works on the principle of voltage-gated field effect transistor. When a voltage is applied to the gate of the MOSFET, it creates an electric field, which attracts electrons from the semiconductor substrate. When enough electrons are attracted to the gate, it creates what is known as a channel, which allows current to flow from the source to the drain. The magnitude of the drain current is governed by the voltage applied to the gate, which is known as the gate-source voltage. Depending on the type of MOSFET, a positive or a negative gate-source voltage will be required to switch the device on. The NTHD5905T1 has a very low on-state resistance, which is necessary for applications that require low power dissipation. This is due to the high gate-source voltage, which allows for a large channel conductance and lower resistance. The NTHD5905T1 is also fast switching, with a maximum switching frequency of 500 kHz. This helps to provide the fast response times required for many high power applications. The main application fields of the NTHD5905T1 include high power switching, audio and video circuits, computer communications and light sensing applications. The device also has many uses in industrial applications, such as motor control, frequency control, and power switching. The NTHD5905T1 can also be used to interface digital components and control the output of power amplifiers. In summary, the NTHD5905T1 is an array of transistors which offers a combination of high source and drain currents with low on-state resistance. This makes the device suitable for applications requiring low power dissipation, fast switching and high power switching. The NTHD5905T1 is commonly used in high power switching, motor control, audio and video circuits, computer communications and light sensing applications.
The specific data is subject to PDF, and the above content is for reference
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