Allicdata Part #: | NTHD4401PT3-ND |
Manufacturer Part#: |
NTHD4401PT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 2.1A CHIPFET |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surf... |
DataSheet: | NTHD4401PT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Base Part Number: | NTHD4401P |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A |
Rds On (Max) @ Id, Vgs: | 155 mOhm @ 2.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 10V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | ChipFET™ |
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.NTHD4401PT3 is a metal-oxide-semiconductor field-effect transistor (MOSFET) array integrated circuit developed by STMicroelectronics Inc. It includes two separate N-channel enhancement mode power FETs with integrated ESD protection diodes. The NTHD4401PT3 is designed to be used in applications that require low on-resistance and low gate charge. It is suitable for beefy power switching applications and is also widely used in industrial, automotive, and energy sectors.
Application Fields
The NTHD4401PT3 is designed for a wide range of low-side switching, such as in automotive switch-mode power supplies, industrial control systems, LED drivers, and motor control applications. It is also used in automotive, telecom, energy, and industrial systems. Additionally, NTHD4401PT3 can be used in gate drive and power electronics applications using high frequency switching. It is capable of operating at temperatures up to 175°C, and its rugged leadless hermetic package is designed to withstand harsh thermal and voltage cycling environments.
Working Principle
NTHD4401PT3 utilizes an insulated gate to control current flow between source, gate, and drain terminals. Source and drain are connected to the power source and load respectively, while the gate is connected to the control signal. When the gate voltage is applied, the current between the source and drain is controlled, and the output can be switched between high and low voltage states. The NTHD4401PT3 MOSFET array is designed to minimize power losses such as gate charge and on-resistance, enabling higher efficiency and lower power consumption in power-switching applications.
Furthermore, the use of an ESD protection diode between the source and gate terminals helps to prevent damage caused by electrostatic discharge (ESD). This ESD protection diode has very low forward voltage drop, enabling safe handling of ESD voltages up to 400V. NTHD4401PT3 also offers integrated thermal shutdown, over-temperature management, and a wide signal range.
Conclusion
NTHD4401PT3 is a two-channel MOSFET array IC developed by STMicroelectronics. It is suitable for a wide range of low-side switching applications and can operate at temperatures up to 175°C. NTHD4401PT3 main features include low on-resistance, low gate charge, and integrated ESD protection. It also features integrated thermal shutdown, over-temperature management, and a wide signal range. This makes the NTHD4401PT3 a great choice for power-switching applications used in industrial, automotive, and energy sectors.
The specific data is subject to PDF, and the above content is for reference
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