NTHD3100CT1G Discrete Semiconductor Products

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The NTHD3100CT1G is an application field and working principle array of high-side power MOSFETs. It is specially designed for power supply and battery applications with a relatively low on-state resistance of just 1.1 milliohms. The on-state resistance of this device is reduced using a highly efficient vertical power MOSFET structure. As a result, it is able to handle higher drain currents than other solutions of its type.

The NTHD3100CT1G provides fast switching performance and low on-state resistance coupling with a guaranteed drain-source breakdown voltage of 40V. It also has built-in ESD protection and reverse-bias safety protection to help ensure reliable operation in harsh environments. In addition, it is specifically designed to have low operating temperature rise in order to maintain peak efficiency.

The NTHD3100CT1G has both drain and source terminals connected directly to the silicon wafer of the MOSFET. This allows a larger gate-source capacitance and higher drive current so that faster switching is achievable. The MOSFET’s gate threshold voltage is reduced with a low gate-oxide junction leakage design, making it suitable for switching applications with low voltages. The device can also withstand surge events and is protected from latch-up due to its low gate-oxide junction leakage.

In terms of application fields and working principles, the NTHD3100CT1G array is most commonly used in power supplies, battery chargers, and applications that need efficient and fast high-side power switching. Its low on-state resistance is well-suited for high current loads in various applications, such as converting 12V DC to 5V DC for powering USB ports and other types of digital devices.

The NTHD3100CT1G array is well-suited for low voltage and fast switching applications. When using this device, two important considerations must be made. First, since its on-state resistance is relatively low, it can be vulnerable to power dissipation. Therefore, it is important to make sure that the device is properly heat-sinked and the current going through it is limited. Second, since the MOSFET is a high-side switch, the gate-source voltage must always be greater than the source voltage in order to keep it in an on-state condition.

Overall, the NTHD3100CT1G is an array of high-side power MOSFETs designed to be efficient and fast, making it perfect for power supply and battery applications. It is able to handle large levels of current due to its low on-state resistance and has built-in protections to help ensure reliable operation. Additionally, its low gate-oxide junction leakage helps prevent latch-up issues, making it an ideal choice for low voltage and fast switching applications.

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