NTHD3100CT3

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NTHD3100CT3 is an array of enhancement-mode field-effect transistors (FETs) with power rating and performance level suitable for the high frequency switching and linear applications, such as DC/DC and DC/AC converters, power switching converters, motor drives, and relay drivers. This GaN-based transistor array has good thermal performance, higher operating frequency and lower heat dissipation.

The NTHD3100CT3 consists of multiple FET cells connected to multiple notes in an array of 8x8 and 7x7 cells. Each FET cell has three terminals: drain (D), gate (G) and source (S). A P-channel connection configuration is used for the gate and drain connections, allowing for control and better regeneration for the gate and drain signals. The NTHD3100CT3 has an on-resistance of 2.1 mOhms max and a P-channel of 4.0 mOhms max. It also has an input voltage rating of 3.3V and is rated for a continuous current of 100A.

The NTHD3100CT3 has an operating frequency of 900 kHz, making it suitable for high-speed switching applications. It also features a capability to drive low-impedance loads, enabling it to function as a low-side switch. The device is also RoHS compliant and meets ESD rating safety standards.

The working principle of the NTHD3100CT3 is based on the principle of electrostatics. When a voltage potential is applied to the gate of the FET, a static electric field is formed between the source and the drain. This field causes the electrons in the source region to be drawn towards the drain region, reducing the resistance between the two and allowing current to flow. The strength of the static electric field increases as the gate voltage is increased and the resistance between the two decreases. This process is known as Channel Formation and allows current to flow between the source and drain.

The NTHD3100CT3 is capable of very high switching frequencies, making it a suitable choice for motor drives and other high-frequency applications. Its on-resistance allows it to perform as an excellent low-side switch and its P-channel connection configuration gives it superior regeneration for the gate and drain circuits. It also has a voltage rating of 3.3V, making it a suitable replacement for lower voltage FETs. Overall, the NTHD3100CT3 is a high-performance FET array, suitable for a variety of applications.

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