Allicdata Part #: | NTHD5904NT3-ND |
Manufacturer Part#: |
NTHD5904NT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 2.5A CHIPFET |
More Detail: | N-Channel 20V 2.5A (Ta) 640mW (Ta) Surface Mount C... |
DataSheet: | NTHD5904NT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 465pF @ 16V |
FET Feature: | -- |
Power Dissipation (Max): | 640mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
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The NTHD5904NT3 component is a single n-channel transistor, which functions both as an amplifier and a switch. It is a high-Speed power MOSFET with an approximate on-resistance of 4.9Ohms, a maximum drain current of 50mA, and a drain-source voltage of 39V. This component can be used in a variety of applications including motor control, battery protection, reverse polarity protection and RF switching.
The NTHD5904NT3 functions as an amplifier in that it takes input signals and amplifies them. Normally, when the input signal is applied to the gate, the current flowing through the transistor increases, creating an amplified signal at the drain. The NTHD5904NT3 can also be used as a switch in that when a gate voltage is applied, current is allowed to flow from the drain to the source. When the gate voltage reaches a certain threshold, the current flow is shut off.
The NTHD5904NT3 is a common source n-channel MOSFET, meaning the drain is connected to the source through the channel. The input signal is applied to the gate, which is insulated from the channel. This insulation prevents current from flowing from the gate to the source or drain. When the input signal is applied to the gate, it causes the channel to form a connection between the source and the drain.
The NTHD5904NT3 features a low gate threshold voltage, allowing it to operate at relatively low input voltages. Additionally, this transistor has a high maximum drain current and drain-source voltage rating, making it suitable for high-power applications.
The NTHD5904NT3 is an ideal choice for use in a variety of applications. This device can be used as a switch in circuits that require control of high-power devices. Additionally, it can be used as an amplifier for radio frequencies, since it has a high switching speed and can support relatively large output voltages.
In summary, the NTHD5904NT3 is a single n-channel transistor that functions both as an amplifier and a switch. It is a high-Speed power MOSFET with an approximate on-resistance of 4.9Ohms, a maximum drain current of 50mA, and a drain-source voltage of 39V. This component can be used in a variety of applications, including motor control, battery protection, reverse polarity protection and RF switching.
The specific data is subject to PDF, and the above content is for reference
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