NTHD2102PT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	8V
Current - Continuous Drain (Id) @ 25°C:	3.4A
Rds On (Max) @ Id, Vgs:	58 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds:	715pF @ 6.4V
Power - Max:	1.1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	ChipFET™
Base Part Number:	NTHD2102P

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NTHD2102PT1G Application Field and Working Principle

The NTHD2102PT1G is a high performance, low-power MOSFET array, manufactured by On Semiconductor. It is an integrated logic device which combines four independent N-channel MOSFET switches and a logic interface for control of all four outputs. This device reduces the total number of components and wiring needed to construct complex logic functions.The NTHD2102PT1G is available in a 3-pin package and is suitable for a wide range of applications, including power supply switching, power stage switching, digital controllers, motor control, and current sensing. It is also suitable for use in battery-operated devices, where low quiescent current is important. The NTHD2102PT1G features an on-chip latching logic circuit which is compliant with the I2C communication protocol.The NTHD2102PT1G consists of four independent N-channel MOSFETs, each featuring an integral logic level gate drive circuit. When the logic input voltage is high, the output voltage is pulled low, turning any connected components on. When the logic input voltage is low, the output voltage is pulled high, and the connected components are turned off. The NTHD2102PT1G contains an on-chip voltage regulator, allowing the device to operate from a single 4.5V to 6.5V power supply.The NTHD2102PT1G is designed to operate over a wide ambient temperature range of -40 to +105°C. This device is RoHS-compliant, and features internal EMI filter, as well as noise immunity. In addition, the NTHD2102PT1G includes numerous safety features, such as over-current protection, and over-voltage protection.In conclusion, the NTHD2102PT1G is a high performance, low-power MOSFET array which combines four independent N-channel MOSFET switches and a logic interface for control of all four outputs. It is suitable for a wide range of applications and is designed to operate over a wide ambient temperature range of -40 to +105°C. The device also includes numerous safety features.

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