NTHD4102PT1G Discrete Semiconductor Products |
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| Allicdata Part #: | NTHD4102PT1GOSTR-ND |
| Manufacturer Part#: |
NTHD4102PT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2P-CH 20V 2.9A CHIPFET |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.9A 1.1W Surf... |
| DataSheet: |  NTHD4102PT1G Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 P-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 2.9A |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 16V |
| Power - Max: | 1.1W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SMD, Flat Lead |
| Supplier Device Package: | ChipFET™ |
| Base Part Number: | NTHD4102P |
Description
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NTHD4102PT1G is a type of High-Speed Dual N-Channel Power MOSFETs. It is produced by ON Semiconductor and its model number is NTHD4102PT1G. The device was released first in January 2005, and the design and manufacture of the device has been improved over the past few years. This article aims to explain the application and working principle of the NTHD4102PT1G and classify it into the category Transistors, FETs and MOSFETs Arrays.
Applications of NTHD4102PT1G
NTHD4102PT1G has very high-speed switching capabilities due to the device\'s low drain-source resistance and low gate charge. As a result, this makes the device suitable for use in high frequency, high efficiency power supplies, and in light-load efficiency switching circuits. Due to its low on-state resistance, NTHD4102PT1G is commonly used in applications such as DC-to-DC converters, motor-control circuits, and power inverters.
Working Principle of NTHD4102PT1G
NTHD4102PT1G is a type of silicon MOSFET that uses a field plate structure to achieve superior speed, low drain-source resistance, and low gate charge. A field plate is a conductive plate located very close to the drain region; it serves to extend the electrostatic force across the channel, allowing for more effective charge transfer between the source and drain. As a result, the NTHD4102PT1G can switch at much higher speeds with less power loss. Furthermore, due to its high switching speed, the NTHD4102PT1G is ideal for applications that require high speed operation and low power dissipation.
NTHD4102PT1G is designed to work with a dual-gate structure. Its gate structure is designed to reduce the effect of Miller Plateau region and the body effect. As a result, the MOSFET can operate efficiently and at higher speeds. Furthermore, the dual-gate structure of NTHD4102PT1G also reduces the possibility of overdriving the device, which is especially important in sensitive circuits such as motor drive circuits.
Conclusion
The NTHD4102PT1G is an advanced High-Speed Dual N-Channel Power MOSFET. In this article, the application and working principle of the NTHD4102PT1G are discussed, and the device is classified into Transistors, FETs and MOSFETs Arrays. With its high-speed switching capabilities, low on-state resistance, and low gate charge, the NTHD4102PT1G is suitable for use in high frequency, high efficiency power supplies, motor-control circuits, and power inverters. The device is designed to work with a dual-gate structure to reduce overdriving, as well as to improve switching speed and lower power dissipation. In summary, NTHD4102PT1G is a powerful MOSFET that can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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