Allicdata Part #: | NTHD5904NT1GOSTR-ND |
Manufacturer Part#: |
NTHD5904NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 2.5A CHIPFET |
More Detail: | N-Channel 20V 2.5A (Ta) 640mW (Ta) Surface Mount C... |
DataSheet: | NTHD5904NT1G Datasheet/PDF |
Quantity: | 1000 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 465pF @ 16V |
FET Feature: | -- |
Power Dissipation (Max): | 640mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Series: | -- |
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The NTHD5904NT1G is part of the recently released transistors and FETs, specifically single MOSFETs. This component provides customers with a robust and reliable device that can be used in a variety of applications. The NTHD5904NT1G is a medium voltage, low on-state resistance, low gate drive, high speed, low input capacitance, N-Channel MOSFET that can be utilized in multiple scenarios.
This single MOSFET is designed to allow for medium power handling capabilities in a low-power board space. The N-Channel architecture of this device helps minimize noise and switching losses in the circuit, providing consistent and reliable performance over the medium power range. The NTHD5904NT1G is suited for PWM applications, particularly in applications where the voltage of the input will rise over a wide range. Additionally, its low input capacitance assists the FET in preventing crosstalk and undershoot when connected to high-speed logic circuits.
The NTHD5904NT1G provides customers with a promising option in regards to their power handling capabilities as well as their general performance. The device features low switching losses and a high maximum current capability - allowing it to achieve a maximum cover voltage of up to 800V and a maximum drain-source current of up to 8A. The NTHD5904NT1G also features ultrafast switching speeds, with a rise time of 9ns and a fall time of 17ns - allowing designers to quickly switch the FET on and off, minimizing the delay in circuit switching.
The NTHD5904NT1G can be utilized in a variety of applications, including automotive, industrial, and consumer electronics. It is frequently used for PWM, DC-DC and other power control applications where an especially robust, medium voltage MOSFET is in high demand. Additionally, it can also be utilized in applications where an ultra-fast switching speed is a necessity, providing an ideal choice for areas such as motor control and AC/DC converters. Lastly, it can also be used in a multitude of specialized applications and scenarios, such as switched-mode power supplies, and power semiconductor applications.
The NTHD5904NT1G is a versatile and reliable single MOSFET that is ideal for medium voltage, low on-state resistance, low gate drive, high speed, low input capacitance needs. It features superior switching performance and allows for a fast response time due to its low input capacitance. Additionally, its wide range of applications makes it an ideal choice for a variety of commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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