NTHD4401PT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTHD4401PT1GOSTR-ND |
Manufacturer Part#: |
NTHD4401PT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 2.1A CHIPFET |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surf... |
DataSheet: | NTHD4401PT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A |
Rds On (Max) @ Id, Vgs: | 155 mOhm @ 2.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 10V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | ChipFET™ |
Base Part Number: | NTHD4401P |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTHD4401PT1G is an array of N-channel enhancement mode MOSFETs that offer excellent switching performance, fast switching speed, and low drive current in an easily mountable SOT-363 package. It is ideally suited for use in signal and low-power groupings where fast switching and low power consumption are required.
Application Field
The NTHD4401PT1G offers a variety of applications such as personal computers, data processors, system-on-chip, digital signal processor and optical networking systems. It can be used to switch signals in high-speed digital circuits with low power consumption, such as in DC-DC converters. It can also be used in high-speed switching and low current load applications such as load switch, clock switch and level shifter.
Working Principle
The NTHD4401PT1G is composed of two N-channel MOSFETs in an array configuration. Each MOSFET has its own dedicated gate electrode and drain. The package is a dual-gate SOT-363 package in which the individual MOSFETs are connected in parallel with each other via a single source electrode. The source electrode serves as a common source of voltage for driving both MOSFETs. The combination of the two MOSFETs in an array allows them to perform their switching operations much faster than if they were connected in series. On the other hand, the current requirement is also much lower, since the current must go through both MOSFETs in order to reach the output.
The normal operation of the NTHD4401PT1G is for the voltage (VG) applied to the gate electrodes of the two MOSFETs to be equal. This allows the current to easily flow from the source to the drain of each MOSFET and is the most common use case for this device. However, it is possible to apply different voltages to the gates of the two MOSFETs to control the current flow from the source to the drain.
The NTHD4401PT1G is a very efficient device and allows for significant power savings when switching signals. Its fast switching speed makes it a great choice for high speed digital applications and its low power consumption makes it ideal for low voltage, low current applications.
The specific data is subject to PDF, and the above content is for reference
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