NTHD4401PT1G Allicdata Electronics

NTHD4401PT1G Discrete Semiconductor Products

Allicdata Part #:

NTHD4401PT1GOSTR-ND

Manufacturer Part#:

NTHD4401PT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 2.1A CHIPFET
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surf...
DataSheet: NTHD4401PT1G datasheetNTHD4401PT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Base Part Number: NTHD4401P
Supplier Device Package: ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTHD4401PT1G is an array of N-channel enhancement mode MOSFETs that offer excellent switching performance, fast switching speed, and low drive current in an easily mountable SOT-363 package. It is ideally suited for use in signal and low-power groupings where fast switching and low power consumption are required.

Application Field

The NTHD4401PT1G offers a variety of applications such as personal computers, data processors, system-on-chip, digital signal processor and optical networking systems. It can be used to switch signals in high-speed digital circuits with low power consumption, such as in DC-DC converters. It can also be used in high-speed switching and low current load applications such as load switch, clock switch and level shifter.

Working Principle

The NTHD4401PT1G is composed of two N-channel MOSFETs in an array configuration. Each MOSFET has its own dedicated gate electrode and drain. The package is a dual-gate SOT-363 package in which the individual MOSFETs are connected in parallel with each other via a single source electrode. The source electrode serves as a common source of voltage for driving both MOSFETs. The combination of the two MOSFETs in an array allows them to perform their switching operations much faster than if they were connected in series. On the other hand, the current requirement is also much lower, since the current must go through both MOSFETs in order to reach the output.

The normal operation of the NTHD4401PT1G is for the voltage (VG) applied to the gate electrodes of the two MOSFETs to be equal. This allows the current to easily flow from the source to the drain of each MOSFET and is the most common use case for this device. However, it is possible to apply different voltages to the gates of the two MOSFETs to control the current flow from the source to the drain.

The NTHD4401PT1G is a very efficient device and allows for significant power savings when switching signals. Its fast switching speed makes it a great choice for high speed digital applications and its low power consumption makes it ideal for low voltage, low current applications.

The specific data is subject to PDF, and the above content is for reference

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