Allicdata Part #: | NTHD3101FT3-ND |
Manufacturer Part#: |
NTHD3101FT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 3.2A CHIPFET |
More Detail: | P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount Ch... |
DataSheet: | NTHD3101FT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.4nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 10V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
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The NTHD3101FT3 is a single n-channel logic level Enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect transistor) that has a low threshold voltage and requires a minimum gate-source voltage of -1.5 volts to turn ON. It has a high breakdown voltage of 80 volts and a drain-source current of 4.6 amps. This makes it an ideal choice for a wide range of applications, where high current is needed for switching, such as audio amplifiers and switching power supplies.
In general, conventional MOSFETs have difficulty switching ON at low voltages, due to the large gate-source voltage required. The NTHD3101FT3, with its low threshold voltage, is able to overcome this problem. This allows it to be used in a wide variety of applications, such as motor controllers, solenoid drivers and low voltage logic level applications.
The NTHD3101FT3 also has a low on-resistance of 1.7 ohms, which is an important factor when dealing with high current applications. The device has a low gate charge and a fast switching speed, making it an ideal choice for high frequency switching applications.
In general, the working principle of the NTHD3101FT3 is similar to that of other MOSFETs. It is a voltage-controlled device, meaning that it is turned on and off by applying voltages to the gate. When the gate-source voltage of the device is greater than the threshold voltage, the device is turned on and electrons can flow from the source to the drain.
The NTHD3101FT3 can be used in a variety of different applications. It can be used as an analog switch for audio and video applications, as a motor controller, a solenoid driver, a low voltage logic level switch, and for high frequency switching applications. It is also suitable for use in power supplies, where a high current is needed for switching.
The NTHD3101FT3 offers a number of advantages over conventional MOSFETs, including a low gate charge, a high drain-source voltage, a fast switching speed, and a low on-resistance. This makes it the ideal choice for a range of applications, where a high degree of precision, reliability and performance is required.
The specific data is subject to PDF, and the above content is for reference
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